Zero idle time Z-state circuit for phase-locked loops, delay-locked loops, and switching regulators
View Patent ↗The four types of the zero idle time Z-state circuits are presented with an improvement in productivity, cost, chip area, power consumption, and design time. The zero idle time Z-state circuits basically include a sensing gate, two stacked PMOS transistors, and a feedback line. The sensing gate senses a voltage at its input assuming no feedback is applied. Again, the corresponding output of two stacked PMOS transistors is assumed to be connected to the sensing input. Two stacked PMOS transistors generate a high impedance Z-state at its output according to the corresponding output of the sensing gate. Therefore, the feedback line keeps sampling the output and feeding back the output voltage to the sensing input. Consequently, the feedback configuration provides the initial output voltage, which is the midpoint voltage decided by the device aspect ratios of the sensing gate before normal operation starts in all three systems such as all kinds of phase-locked loops, delay-locked loops, and switching regulators. Thus, all the zero idle time Z-state circuits within all three systems make the initial condition close to the expected condition in order to enable these systems to come into lock or regulation quickly. Thus, all the zero idle time Z-state circuits utilizing less than twelve transistors presented achieve a fast lock-in time, a solution for harmonic locking problem, a minimization of start-up time, a initial reduction in power and time, a significant reduction in design simulation time, an improvement in productivity, and a higher performance.
1. A power-down enable zero idle time Z-state circuit for making three systems become three zero idle time systems, comprising:
a feedback line connected with the output and input of the power-down enable zero idle time Z-state circuit;
a sensing inverter for sensing a voltage at the feedback line and generating a midpoint voltage decided by the device aspect ratios of the sensing inverter;
a power-down inverter for forcing the feedback line to be at ground so that no current flows during power-down mode;
a two-input CMOS NAND gate for being used as an enabling inverter with one input serving as an inverting power-down input and the other used as the inverting sensing input;
a lower PMOS transistor for being completely turned off during normal mode and being completely turned on during power-down mode, wherein its gate terminal is coupled to the output of the power-down inverter; and
an upper PMOS transistors for being incompletely turned off during normal mode, in response to the output of the CMOS NAND gate.
2. The circuit as recited in claim 1 wherein the feedback line is at ground to ensure that no current flows into the circuit when the power-down input is at the power supply.
3. The circuit as recited in claim 1 wherein the power-down enable zero idle time Z-state circuit can be a simple zero idle time Z-state circuit if the gate terminal of the lower PMOS transistor is coupled to power supply by eliminating the power-down inverter and replacing the CMOS NAND gate by an inverter.
4. The circuit as recited in claim 1 wherein the sensing inverter can comprise an odd number of sensing inverters such an sensing inverter, three sensing inverters, five sensing inverters, and seven sensing inverters.
5. The circuit as recited in claim 1 wherein the power-down enable zero idle time Z-state circuit can be inserted into a phase-locked loop, delay-locked loop, or switching regulator.
6. The circuit as recited in claim 5 wherein the phase-locked loop consists of a phase-frequency detector, a charge-pump, a low-pass filter, a voltage-controlled oscillator, and a frequency divider in a loop.
7. The circuit as recited in claim 5 wherein the delay-locked loop consists of a phase detector, a charge-pump, a loop filter, and a voltage-controlled delay line.
8. The circuit as recited in claim 6 wherein the output of the charge-pump and low-pass filter is connected to the feedback line of the power-down enable zero idle time Z-state circuit.
9. The circuit as recited in claim 7 wherein the output of the charge-pump and loop filter is connected to the feedback line of the power-down enable zero idle time Z-state circuit.
10. The circuit as recited in claim 6 wherein the phase-locked loop has a voltage-controlled oscillator whose frequency increases proportionally to the output voltage of the filter.
11. The circuit as recited in claim 7 wherein the delay-locked loop has a voltage-controlled delay line whose frequency increases proportionally to the output voltage of the filter.
12. A p-type power-down enable zero idle time Z-state circuit for making three systems become three zero idle time systems, comprising:
a feedback line connected with the output and input of the p-type power-down enable zero idle time Z-state circuit;
a sensing inverter for sensing a voltage at the feedback line and generating midpoint voltage decided by the device aspect ratios of the sensing inverter;
a power-down inverter for forcing the feedback line to be at power supply so that no current flows during power-down mode;
a two-input CMOS NAND gate for being used as an enabling inverter with one input serving as an inverting power-down input and the other used as the non-inverting sensing input;
an upper PMOS transistor for being completely turned off during normal mode and being completely turned on during power-down mode, wherein its gate terminal is coupled to the output of the power-down inverter; and
a lower PMOS transistors for being incompletely turned off during normal mode, in response to the output of the CMOS NAND gate.
13. The circuit as recited in claim 12 wherein the feedback line is at power supply to ensure that no current flows into the p-type power-down enable zero idle time Z-state circuit when the power-down input is at the power supply.
14. The circuit as recited in claim 12 wherein the sensing inverter can comprise an even number of sensing inverters such as null, two sensing inverters, four sensing inverters, six sensing inverters, and eight sensing inverters.
15. The circuit as recited in claim 12 wherein the CMOS NAND gate functions as the sensing gate and thus the device aspect ratios of the sensing CMOS NAND gate decide the midpoint voltage if the sensing inverter does not exist.
16. The circuit as recited in claim 12 wherein the p-type power-down enable zero idle time Z-state circuit can be inserted into a phase-locked loop, delay-locked loop, or switching regulator.
17. The circuit as recited in claim 16 wherein the phase-locked loop consists of a phase-frequency detector, a charge-pump, a low-pass filter, a voltage-controlled oscillator, and a frequency divider in a loop.
18. The circuit as recited in claim 16 wherein the delay-locked loop consists of a phase detector, a charge-pump, a loop filter, and a voltage-controlled delay line.
19. The circuit as recited in claim 17 wherein the phase-locked loop has a voltage-controlled oscillator whose frequency decreases proportionally to the output voltage of the filter.
20. The circuit as recited in claim 18 wherein the delay-locked loop has a voltage-controlled delay line whose frequency decreases proportionally to the output voltage of the filter.