Semiconductor device, method of manufacturing thereof, circuit board and electronic apparatus
View Patent ↗A semiconductor device is provided comprising: a semiconductor element including a plurality of electrodes; a plurality of resin layers; a plurality of wirings; and a plurality of external terminals coupled to the wirings. First wirings of the plural wirings are formed at the bottom of a first resin layer and second wirings are formed at the top of the first resin layer.
1. A semiconductor device comprising:
a semiconductor element including a plurality of electrodes aligned along a circumferential edge thereof;
first wirings formed on the semiconductor element and having first ends electrically coupled to a first set of the plurality of electrodes;
a first resin layer formed on the first wirings;
second wirings formed on the first resin layer and having first ends electrically coupled to a second set of the plurality of electrodes, the first and second wirings crossing one another and separated by the first resin layer; and
a plurality of external terminals electrically coupled to second ends of the first and second wirings.
2. The semiconductor device according to claim 1 , wherein a metal film made of the same material as the first wiring is formed on at least one of the electrodes which is not coupled to the first wirings.
3. The semiconductor device according to claim 1 , wherein at least some of the first wirings are electrically coupled the external terminals located at an outermost circumferential position on the semiconductor element relative to other external terminals.
4. The semiconductor device according to claim 1 , wherein the semiconductor device is packaged with a chip size packaging method.
5. The semiconductor device according to claim 1 , wherein the external terminals comprise solder balls.
6. The semiconductor device according to claim 1 , wherein a bore hole is formed in the resin layer and at least one of the first and second wirings are coupled to at least one of the external terminals through the bore hole.
7. The semiconductor device according to claim 1 , wherein the semiconductor device is manufactured by cutting a silicon wafer.
8. The semiconductor device according to claim 7 , wherein the resin layer is spaced apart from a region of the silicon wafer to be cut.
9. The semiconductor device according to claim 1 , further comprising a plurality of resin layers on the semiconductor element and wherein at least one of the plurality of resin layers is formed in a region in which the electrodes are formed.
10. A circuit substrate including the semiconductor device according to claim 1 .
11. An electronic apparatus including the semiconductor device according to claim 1 .