Dry etching method and apparatus for use in the LCD device
View Patent ↗A dry etching step during the manufacturing of a substrate for a liquid crystal display (LCD) device is improved by placing the substrate at a predetermined distance away from the lower electrode to prevent damage of the substrate due to electrostatic formed therebetween. An insulating tape attached on the lower electrode provides electrostatic protection between the substrate and the lower electrode, so that the substrate is properly lifted off the lower electrode via the lifting pins of the lower electrode without electrostatic interference.
1. A dry-etching apparatus, comprising:
a process chamber having a gas inlet, the gas inlet allowing a reactive gas into the process chamber;
a first electrode arranged at a predetermined location in the process chamber;
a second electrode in the process chamber spaced apart from and opposite to the first electrode, the second electrode having a plurality of lift pins received in a plurality of holes, and an insulating tape, the insulating tape being arranged between the plurality of lift pins such that the pins are disposed beyond outer edges of the insulating tape, wherein the insulating tape is selected for having characteristics which do not lower a degree of vacuum, the insulating tape distancing a substrate and the second electrode such that the substrate and the electrode are spaced apart from each other to define a space beyond the outer edges of the insulating tape. and the distance between the substrate and the second electrode reduces an electrostatic attraction between the second electrode and the substrate prior to a lifting of the substrate; and
a power source for applying voltages to the first and second electrodes.
2. The dry-etching apparatus of claim 1 , wherein the process chamber is a vacuum chamber.
3. The dry-etching apparatus of claim 1 , wherein the insulating tape is a vacuum tape.
4. The dry-etching apparatus of claim 1 , wherein the insulating tape is located between the plurality of lift pins.
5. The dry-etching apparatus of claim 1 , wherein the power source generates RF (radio frequency) power.
6. The dry-etching apparatus of claim 1 , further comprising a DC (direct current) power source for applying DC voltages to the first and second electrodes.