Liquid crystal display device and fabricating method thereof
View Patent ↗A method for fabricating a liquid crystal display (LCD) device comprises forming an active pattern and a data line on a substrate, the active pattern including a source, a drain, and a channel regions; a first insulation film on a portion of the substrate; forming a gate electrode in a portion of the active pattern where the first insulation film is formed; a second insulation film on the substrate; forming a plurality of first contact holes exposing a portion of the source and drain regions and a second contact hole exposing a portion of the data line; forming a source electrode from a transparent conductive material connected to a source region within the respective first contact hole and a data line within the second contact hole; and forming a pixel and a drain electrodes from the transparent conductive material connected to a drain region within the respective first contact hole.
1. A method for fabricating a liquid crystal display (LCD) device, comprising:
forming an active pattern and a data line on a substrate, the active pattern including a source region, a drain region, and a channel region;
disposing a first insulation film on a portion of the substrate;
forming a gate electrode in a portion of the active pattern where the first insulation film is formed;
disposing a second insulation film on the substrate;
forming a plurality of first contact holes to expose a portion of the source and drain regions and a second contact hole to expose a portion of the data line;
forming a source electrode from a transparent conductive material connected to a source region within one of the plurality of first contact holes and a data line within the second contact hole; and
forming a pixel electrode and a drain electrode from the transparent conductive material connected to a drain region within the other one of the plurality of first contact holes.
2. The method according to claim 1 , further comprising, forming a gate electrode, and thereafter forming a source region and a drain regions by injecting an impurity ion to a certain portions of the active pattern using the gate electrode as a mask.
3. The method according to claim 2 , wherein the impurity ion is a group V element.
4. The method according to claim 3 , wherein the group V element is phosphorus.
5. The method according to claim 2 , wherein the impurity ion is a group III element.
6. The method according to claim 5 , wherein the group III element is boron.
7. The method according to claim 1 , wherein a portion of the drain electrode is extended into a pixel region to form a pixel electrode.
8. The method according to claim 1 , wherein the step of forming the active pattern and the data line comprises:
disposing a silicon layer on the substrate;
disposing a conductive metal layer on the silicon layer;
forming a photosensitive pattern defined by a first portion having a first thickness, a second portion having a second thickness and a third portion by applying a diffraction mask to the photosensitive film;
etching the conductive metal layer exposed by the third portion and the silicon layer disposed directly underneath the exposed conductive metal layer;
removing a portion of the photosensitive film, thereby leaving only the photosensitive film pattern of the first portion; and
forming an active pattern and a data line by patterning the conductive metal layer using the photosensitive film pattern of the first portion as a mask.
9. The method according to claim 8 , wherein the silicon layer is formed of a crystallized silicon thin film.
10. The method according to claim 8 , wherein the first thickness is greater than the second thickness.
11. The method according to claim 8 , wherein the first portion is a data line region.
12. The method according to claim 8 , wherein the second portion is an active pattern region.
13. The method according to claim 8 , wherein the step of removing a portion of the photosensitive film includes ashing.