Fluorine-containing N,N′-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
View Patent ↗A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a carbocyclic or heterocyclic aromatic ring system substituted with one or more fluorine-containing groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
1. An article comprising, in a thin film transistor, a thin film of organic semiconductor material that comprises a fluorine-containing N,N′-diaryl perylene-based tetracarboxylic diimide compound having, attached directly to each imide nitrogen atom, a carbocyclic or heterocyclic aromatic ring system to which one or more fluorine-containing groups are attached.
2. The article of claim 1 wherein the thin film transistor is a field effect transistor comprising a dielectric layer, wherein the third contact means is a gate electrode, the first and second contact means are a source electrode and a drain electrode, and wherein the dielectric layer, the gate electrode, the thin film of organic semiconductor material, the source electrode, and the drain electrode are in any sequence as long as the gate electrode and the film of organic semiconductor material both contact the dielectric layer, and the source electrode and the drain electrode both contact the thin film of the organic semiconductor material.
3. The article of claim 1 wherein the organic semiconducting material is capable of exhibiting electron mobility greater than 0.01 cm 2 /Vs.
4. The article of claim 1 , wherein the organic semiconductor material comprises a compound that is a fluorine-containing N,N′-diaryl 3,4,9,10 perylene-based tetracarboxylic acid diimide compound represented by the following structure:
wherein n is an integer from 0 to 8, A 1 and A 2 are each independently a carbocyclic or heterocyclic aromatic ring systems substituted with at least one fluorine-containing group; and in which compound a perylene nucleus is optionally substituted with up to eight independently selected X organic or inorganic substituent groups that do not adversely affect n-type semiconductor properties of the material.
5. The article of claim 4 wherein the A 1 and A 2 moieties each independently comprise a phenyl ring system substituted with one or more fluorines or fluoroalkyl groups or any combinations thereof.
6. The article of claim 4 wherein the fluorine-containing groups are selected from a fluorine atom, fluoroalkyl groups, fluorinated carbocyclic or heterocyclic aromatic rings having 5-10 ring atoms and combinations thereof.
7. The article of claim 4 wherein A 1 and A 2 each comprises a fused aromatic ring.
8. The article of claim 4 wherein X is independently selected from alkyl, alkenyl, alkoxy, halogens, and cyano, or combinations thereof.
9. The article of claim 4 , wherein the organic semiconductor material comprises a compound selected from N,N′-diaryl 3,4,9,10 perylene-based tetracarboxylic acid diimide compounds represented by the following structure:
wherein X and n are as defined previously, and each R 1 to R 5 group on each of two phenyl rings are independently selected from hydrogen and fluorine-containing groups, so long as at least one of R 1 to R 5 on each of the two phenyl rings is a fluorine-containing group.
10. The article of claim 9 wherein at least two of R 1 to R 5 on each of the two phenyl rings is a fluorine-containing group.
11. The article of claim 9 wherein all of R 1 to R 5 on each of the two phenyl rings is a fluorine-containing group.
12. The article of claim 11 wherein n is zero and each and every R 1 to R 5 on each of the two phenyl rings is a fluorine atom.
13. The article of claim 1 , wherein the thin film transistor has an on/off ratio of a source/drain current of at least 10 4 .
14. The article of claim 1 , wherein the organic semiconductor material comprises a compound represented by the following structure:
wherein X and n are as defined above.
15. The article of claim 2 , wherein the gate electrode is adapted for controlling, by means of a voltage applied to the gate electrode, a current between the source and drain electrodes through said organic semiconductor material.
16. The article of claim 15 wherein the gate dielectric comprises an inorganic or organic electrically insulating material.
17. The article of claim 1 wherein the thin film transistor further comprises a non-participating support that is optionally flexible.
18. The article of claim 2 wherein the source, drain, and gate electrodes each independently comprising a material selected from doped silicon, metal, and a conducting polymer.
19. An electronic device selected from the group consisting of integrated circuits, active-matrix display, and solar cells comprising a multiplicity of thin film transistors according to claim 1 .
20. The electronic device of claim 19 wherein the multiplicity of the thin film transistors is on a non-participating support that is optionally flexible.