Resistance dividing circuit and manufacturing method thereof

1. A resistance dividing circuit comprising:

a linear resistance wiring made up of polysilicon, said resistance wiring on a semiconductor substrate and having a plurality of branch portions on the semiconductor substrate;

silicide layers formed only on the branch portions of said resistance wiring;

an insulating layer formed so as to cover the semiconductor substrate, the resistance wiring and the silicide layers;

contact plugs extending through the insulating layer and having lower ends connected to the silicide layers; and

fetching terminals connected to upper ends of the contact plugs respectively.

2. A programmable gain amplifier comprising:

a resistance dividing circuit, which has a linear resistance wiring made up of polysilicon, said resistance wiring on a semiconductor substrate and having a plurality of branch portions on the semiconductor substrate, and silicide layers formed on the branch portions, and an insulating layer formed so as to cover the semiconductor substrate, the resistance wiring and the silicide layers, and contact plugs extending through the insulating layer and having lower ends connected to the silicide layers, and fetching terminals connected to upper ends of the contact plugs respectively;

an operational amplifier equipped with a high-voltage input terminal, a low-voltage input terminal and an output terminal,

wherein a plurality of the fetching terminals of the resistance dividing circuit are respectively parallel-connected to the low-voltage input terminal via discrete switches, and

wherein the high-voltage input terminal is grounded.

3. The programmable gain amplifier according to claim 2 , wherein one end of the resistance dividing circuit is connected to the output terminal.

4. A programmable gain amplifier comprising:

a resistance dividing circuit, which has a linear resistance wiring made up of polysilicon, said resistance wiring on a semiconductor substrate and having a plurality of branch portions on the semiconductor substrate, and silicide layers formed on the branch portions, and an insulating layer formed so as to cover the semiconductor substrate, the resistance wiring and the silicide layers, and contact plugs extending through the insulating layer and having lower ends connected to the silicide layers, and fetching terminals connected to upper ends of the contact plugs respectively; and

an operational amplifier equipped with a high-voltage input terminal, a low-voltage input terminal and an output terminal,

wherein a plurality of the fetching terminals of the resistance dividing circuit are respectively parallel-connected to the output terminal via discrete switches, and

wherein the high-voltage input terminal is grounded.

5. The programmable gain amplifier according to claim 4 , wherein one end of the resistance dividing circuit is connected to the low-voltage input terminal.

6. The programmable gain amplifier according to claim 4 , wherein an input resistor is further connected to the low-voltage input terminal.

7. The programmable gain amplifier according to claim 4 , wherein a plurality of the input resistors respectively different in resistance value are connected in parallel to the low-voltage input terminal.

8. A method for manufacturing a resistance dividing circuit, comprising:

forming a linear resistance wiring having a plurality of branch portions and made up of polysilicon on a semiconductor substrate;

forming silicide layers only on the branch portions of the resistance wiring;

forming an insulating layer over the semiconductor substrate containing the resistance wiring and the silicide layers;

forming contact plugs extending through the insulating layer and having lower surfaces connected to the silicide layers; and

forming fetching terminals respectively connected to upper surfaces of the contact plugs.

9. The method according to claim 8 , wherein the silicide layers are formed by:

forming a metal layer on the semiconductor substrate containing the resistance wiring,

causing the metal layer and the resistance wiring to react with each other to thereby selectively form silicide layers on the resistance wiring,

removing portions of the metal layer that remain after the reaction, and

selectively removing the silicide layers in such a manner that the silicide layers remain only on the branch portions of the resistance wiring.

10. A resistance dividing circuit comprising:

a polysilicon wiring including contact areas adjacent thereto, on a semiconductor substrate;

silicide layers formed only on the contact areas;

an insulating layer covering the semiconductor substrate, the polysilicon wiring and the silicide layers;

contact plugs extending through the insulating layer to the silicide layers; and

terminals respectively connected to the contact plugs.

11. The resistance dividing circuit of claim 10 , further comprising:

an operational amplifier having an high-voltage input terminal, a low-voltage input terminal and an output terminal,

wherein the terminals are respectively connected to the low-voltage input terminal via switches, and wherein the high-voltage input terminal is grounded.

12. The resistance diving circuit according to claim 11 , wherein one end of the resistance dividing circuit is connected to the output terminal.

13. The resistance dividing circuit according to claim 10 , further comprising:

an operational amplifier having a high-voltage input terminal, a low-voltage input terminal and an output terminal,

wherein the terminals are respectively connected to the output terminal via switches, and wherein the high-voltage input terminal is grounded.

14. The resistance dividing circuit according to claim 13 , wherein one end of the resistance dividing circuit is connected to the low-voltage input terminal.