Transflective liquid crystal display device and fabricating method thereof

1. A method of fabricating a substrate for a transflective liquid crystal display device, comprising:

forming a plurality of gate lines on a substrate;

forming at least one data line, a thin film transistor including a semiconductor layer of silicon, a source electrode and a drain electrode, the at least one data line crossing the plurality of gate lines to define a pixel region including a transmissive portion and a reflective portion, the source and drain electrodes directly contacting an upper surface of the semiconductor layer, the source electrode being connected to the at least one data line, and the drain electrode being spaced apart from the source electrode;

forming a first insulating layer directly covering a portion of the thin film transistor, the first insulating layer uncovering the pixel region and a portion of the drain electrode;

forming a transparent material layer over the entire surface of the substrate including a first photoresist pattern and the first insulating layer, wherein the first photoresist pattern contacts all top surfaces of the first insulating layer;

simultaneously removing the first photoresist pattern and a portion of the transparent material layer formed on the first photoresist pattern by lifting off the first photoresist pattern to form a transparent electrode in the pixel region, the transparent electrode directly contacting the drain electrode and the semiconductor layer and covering an entire surface of the transmissive and reflective portions;

forming a second insulating layer on the transparent electrode, the second insulating layer having a first uneven surface; and

forming a reflective layer in the reflective portion, the reflective layer having a second uneven surface corresponding to the first uneven surface,

wherein the reflective layer overlaps the transparent electrode in the reflective portion with the second insulating layer therebetween.

2. The method according to claim 1 , wherein forming the at least one data line, the source electrode and the drain electrode includes forming a semiconductor layer, the semiconductor layer being formed below the at least one data line, the source electrode and the drain electrode, a pattern of the semiconductor layer corresponding to a pattern of the at least one data line, the source electrode and the drain electrode.

3. The method according to claim 1 , wherein forming the at least one data line, the source electrode and the drain electrode includes:

forming a gate insulating layer on an entire surface of the substrate including the plurality of gate lines;

sequentially forming an intrinsic amorphous silicon layer on the gate insulating layer, an impurity-doped amorphous silicon layer on the intrinsic amorphous silicon layer, and a metal layer on the impurity-doped amorphous silicon layer;

forming a second photoresist pattern including a first portion and a second portion, the first portion of the second photoresist pattern being thinner than the second portion of the second photoresist pattern, etching the metal layer, the impurity-doped amorphous silicon layer and the intrinsic amorphous silicon layer using the second photoresist pattern as a shield; and

removing the first portion of the second photoresist pattern, and removing a corresponding portion of the metal layer and a corresponding portion of the impurity-doped amorphous silicon layer to define a channel region corresponding to the exposed portion of the intrinsic amorphous silicon layer.

4. The method according to claim 1 , wherein forming the first insulating layer includes:

forming a first insulating material layer over the entire surface of the substrate including the thin film transistor;

forming a second photoresist pattern to cover a portion of the first insulating material layer including a portion of the thin film transistor, a remaining portion of the first insulating layer overlapping the pixel region and a portion of the drain electrode; and

removing the remaining portion of the first insulating material layer uncovered by the second photoresist pattern to expose the portion of the drain electrode and a portion of the gate insulating layer within the pixel region.

5. The method according to claim 1 , wherein the second insulating layer includes a first hole that exposes a portion of the transparent electrode corresponding to the exposed portion of the drain electrode.

6. The method according to claim 5 , wherein the reflective layer is connected to the transparent electrode through the first hole.

7. The method according to claim 1 , wherein the step of forming the second insulating layer includes:

forming an insulating material layer on the transparent electrode;

forming a plurality of saw-tooth shapes on the insulating material layer; and

melting the insulating material layer including the plurality of saw-tooth shapes at about 35° C.° to form the first uneven shape.