Semiconductor device having NMOSFET and PMOSFET and manufacturing method thereof
View Patent ↗An element isolation dielectric film is formed around device regions in a silicon substrate. The device regions are an n-type diffusion region, a p-type diffusion region, a p-type extension region, an n-type extension region, a p-type source/drain region, an n-type source/drain region, and a nickel silicide film. Each gate dielectric film includes a silicon oxide film and a hafnium silicate nitride film. The n-type gate electrode includes an n-type silicon film and a nickel silicide film, and the p-type gate electrode includes a nickel silicide film. The hafnium silicate nitride films are not on the sidewalls of the gate electrodes.
1. A semiconductor device comprising:
a silicon substrate; and
a CMOSFET on said silicon substrate and including an NMOSFET and a PMOSFET, wherein
a gate dielectric film of said NMOSFET and a gate dielectric film of said PMOSFET each have a laminated structure including a first dielectric film and a second dielectric film, said first dielectric film being on said silicon substrate, and said second dielectric film being on said first dielectric film;
a gate electrode of said NMOSFET includes an n-type silicon film and a first metal silicide film, said n-type silicon film being on said gate dielectric film of said NMOSFET and being in contact with said gate dielectric film of said NMOSFET, and said first metal silicide film being on said n-type silicon film;
a gate electrode of said PMOSFET includes a second metal silicide film directly in contact with said gate dielectric film of said PMOSFET; and
said second dielectric film is a high dielectric constant dielectric film and is not on sidewalls of said gate electrodes of said NMOSFET and said PMOSFET.
2. The semiconductor device as claimed in claim 1 , wherein said first metal silicide film is one of a single-layer film and a multilayer film including at least two films, said single-layer film and said at least two films each including a material selected from a group consisting of nickel silicide, cobalt silicide, palladium silicide, rhodium silicide, ruthenium silicide, platinum silicide, and iridium silicide.
3. The semiconductor device as claimed in claim 1 , wherein said second metal silicide film is one of a single-layer film and a multilayer film including at least two films, said single-layer film and said at least two films each including a material selected from a group consisting of nickel silicide, cobalt silicide, palladium silicide, rhodium silicide, ruthenium silicide, platinum silicide, and iridium silicide.
4. The semiconductor device as claimed in claim 1 , wherein said high dielectric constant dielectric film includes a material selected from a group consisting of silicate nitrides, silicates, and oxides, said silicate nitrides, said silicates, and said oxides containing at least one of hafnium and zirconium.
5. The semiconductor device as claimed in claim 1 , wherein said first dielectric film includes a material selected from a group consisting of silicon oxide, silicon nitride, and silicon oxynitride.
6. The semiconductor device as claimed in claim 1 , comprising a third dielectric film formed on said high dielectric constant dielectric film.
7. The semiconductor device as claimed in claim 6 , wherein said third dielectric film includes a material selected from a group consisting of silicon oxide, silicon nitride, and silicon oxynitride.