Semiconductor laser with grating structure for stabilizing the wavelength of optical radiation

1. An optoelectronic device, comprising a semiconductor laser for generating optical radiation, and a grating structure for stabilizing the optical wavelength of said optical radiation against temperature induced changes, wherein:

the laser includes a laser cavity defined by a first end facet and a second end facet, the first end facet having a low reflectivity for substantially transmitting said generated optical radiation from said cavity and for suppressing Fabry-Perot modes of the laser cavity relative to at least one grating mode, and the second end facet being a high reflectivity facet for substantially reflecting said generated optical radiation within said cavity;

the laser and grating structure are arranged so that the grating structure stabilizes the optical wavelength of said generated optical radiation between a longer wavelength operating limit λ L and a shorter wavelength operating limit λ S when the temperature of the laser varies between, respectively, an upper temperature limit and a lower temperature limit;

the low reflectivity of the first end facet extends beyond both λ L and λ S to, respectively, a maximum wavelength λ MAX and a minimum wavelength λ MIN beyond which the reflectivity of the first end facet rises and no longer suppresses Fabry-Perot modes of the laser cavity,

wherein the high reflectivity of the second end facet does not extend fully between λ S and λ MIN so that Fabry-Perot modes having a wavelength between λ S and λ MIN are additionally suppressed relative said at least one grating mode, and

wherein said at least one grating mode has a threshold current vs temperature curve which is below a threshold current vs temperature curve for said suppressed Fabry-Perot modes at any given temperature between said upper temperature limit and said lower temperature limit.

2. An optoelectronic device as claimed in claim 1 , in which the laser has a lasing medium with a laser gain profile having a peak at a wavelength which lies between λ L and λ S .

3. An optoelectronic device as claimed in claim 1 , in which the first end facet has a reflectivity of no more than 0.5% to optical radiation within the laser cavity over substantially most of the wavelength range between λ L and λ S .

4. An optoelectronic device as claimed in claim 1 , in which the second end facet has a reflectivity of at least 80% over substantially most of the wavelength range between λ S and λ MAX .

5. An optoelectronic device as claimed in claim 1 , in which the second end facet has a reflectivity that drops towards shorter wavelengths over substantially most of the wavelength range between λ S and λ MIN .

6. An optoelectronic device as claimed in claim 5 , in which the reflectivity of the second end facet drops to or below 25% between λ S and λ MIN .

7. An optoelectronic device as claimed in claim 1 , in which said threshold current vs temperature curve for said suppressed Fabry-Perot modes has three regions between said upper temperature limit and said lower temperature limit, namely a lower temperature region and a higher temperature region in which the threshold current vs temperature curve has a positive slope, and a middle temperature region in which the threshold current vs temperature curve has a slope which is flatter than in the adjacent lower and higher temperature regions.

8. An optoelectronic device, comprising a semiconductor laser for generating optical radiation, and a grating structure for stabilizing the optical wavelength of said optical radiation against temperature induced changes, wherein:

the laser includes a laser cavity defined by a first end facet and a second end facet, the first end facet having a low reflectivity for substantially transmitting said generated optical radiation from said cavity and for suppressing Fabry-Perot modes of the laser cavity relative to at least one grating mode, and the second end facet being a high reflectivity facet for substantially reflecting said generated optical radiation within said cavity:

the laser and grating structure are arranged so that the grating structure stabilizes the optical wavelength of said generated optical radiation between a longer wavelength operating limit λ L and a shorter wavelength operating limit λ S when the temperature of the laser varies between, respectively, an upper temperature limit and a lower temperature limit:

the low reflectivity of the first end facet extends beyond both λ L and λ S to, respectively, a maximum wavelength λ MAX and a minimum wavelength λ MIN beyond which the reflectivity of the first end facet rises and no longer suppresses Fabry-Perot modes of the laser cavity,

wherein the high reflectivity of the second end facet does not extend fully between λ S and λMIN so that Fabry-Perot modes having a wavelength between λ S and λ MIN are additionally suppressed relative said at least one grating mode, and

wherein the first end facet has a U-shaped reflectivity profile against wavelength with a relatively low reflectivity band extending between λ MIN and λ MAX , the second end facet has a step-shaped reflectivity profile against wavelength with a step change in reflectivity between a relatively low value and a relatively higher value, wherein said reflectivity profiles overlap such that said step change occurs in a shorter wavelength half of said low reflectivity band.

9. A method of fabricating an optoelectronic device, comprising:

forming a semiconductor laser for generating optical radiation;

forming a grating structure for stabilizing the optical wavelength of said optical radiation against temperature induced changes;

providing the laser with a laser cavity defined by a first end facet and a second end facet, the first end facet having a low reflectivity for substantially transmitting said generated optical radiation from said cavity and for suppressing Fabry-Perot modes of the laser cavity relative to at least one grating mode, and the second end facet being a high reflectivity facet for substantially reflecting said generated optical radiation within said cavity;

arranging the laser and grating structure so that the grating structure stabilizes the optical wavelength of said generated optical radiation between a longer wavelength operating limit λ L and a shorter wavelength operating limit λ S when the temperature of the laser varies between, respectively, an upper temperature limit and a lower temperature limit;

selecting the low reflectivity of the first end facet so that this extends beyond both λ L and λ S to, respectively, a maximum wavelength λMAX and a minimum wavelength λ MIN beyond which the reflectivity of the first end facet rises and no longer suppresses Fabry-Perot modes of the laser cavity; and

selecting the high reflectivity of the second end facet so that this does not extend fully between λ S and λ MIN so that Fabry-Perot modes having a wavelength between λ S and λ MIN are additionally suppressed relative said at least one grating mode,

wherein said at least one grating mode has a threshold current vs temperature curve which is below a threshold current vs temperature curve for said suppressed Fabry-Perot modes at any given temperature between said upper temperature limit and said lower temperature limit.