In-plane switching mode liquid crystal display device having a storage electrode connected to the pixel electrode and under the color filter

1. A fabrication method of an in-plane switching mode liquid crystal display device, comprising:

forming data lines and gate lines arranged in a matrix form on a first substrate to define a pixel;

forming a thin film transistor at a cross portion of the gate and data lines;

forming a black matrix over the gate lines, data lines, and the thin film transistor; forming a color filter layer in the pixel;

forming at least a pair of a common electrode and a pixel electrode over the color filter layer;

forming a storage electrode under the color filter layer, the storage electrode is connected to the pixel electrode; and

forming a liquid crystal layer on the first substrate.

2. The method of claim 1 , wherein forming the thin film transistor includes:

forming a gate electrode;

forming a gate insulating layer on the gate electrode;

forming a semiconductor layer on the gate insulating layer; and

forming a source electrode and a drain electrode on the semiconductor layer.

3. The method of claim 1 , wherein the storage electrode overlaps one of the gate lines, the storage electrode being on the gate insulating layer.

4. The method of claim 1 , further comprising forming an overcoat layer on the color filter layer.

5. The method of claim 1 , further comprising forming a common line in parallel with the gate lines.

6. The method of claim 5 , wherein the storage electrode overlaps the common line.

7. The method of claim 5 , wherein a first portion of the common electrode overlaps the data lines.

8. The method of claim 7 , wherein a second portion of the common electrode overlaps one of the gate lines and the thin film transistor.

9. The method of claim 8 , wherein a third portion of the common electrode overlaps another one of the gate lines.

10. The method of claim 1 , wherein pixel electrodes are formed between common electrodes with a predetermined gap between each of the common electrodes and each of the pixel electrodes.

11. The method of claim 1 , further comprising forming a gate pad and a data pad on the first substrate.

12. The method of claim 11 , wherein the gate pad and data pad include one of Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO).

13. The method of claim 10 , wherein the pixel electrodes are formed of one of Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO).

14. The method of claim 1 , further comprising first and second alignment layers on the first and second substrates.

15. A fabrication method of an in-plane switching mode liquid crystal display device comprising:

forming data lines and gate lines arranged in a matrix form on a first substrate to define a pixel;

forming a thin film transistor at a cross portion of the gate and data lines, the thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode;

forming a black matrix over the gate lines, data lines, and the thin film transistor;

forming a color filter layer in the pixel;

forming a storage electrode positioned under the color filter layer, the storage electrode is connected to the drain electrode and the pixel electrode;

forming an overcoat layer over the color filter layer;

forming at least a pair of a common electrode and a pixel electrode on the overcoat layer; and

attaching the first substrate and a second substrate.

16. The method of claim 15 , further comprising forming a first alignment layer on the first substrate.

17. The method of claim 15 , further comprising forming a second alignment layer on the second substrate.

18. The method of claim 15 , further comprising forming a liquid crystal layer between the first and second substrates.