Semiconductor integrated circuit device
View Patent ↗A COC DRAM including a plurality of stacked DRAM chips is mounted on a motherboard by using an interposer. The interposer includes a Si unit and a PCB. The Si unit includes a Si substrate and an insulating-layer unit in which wiring is installed. The PCB includes a reference plane for the wiring in the Si unit. The wiring topology between a chip set and the COC DRAM is the same for every signal. Accordingly, a memory system enabling a high-speed operation, low power consumption, and large capacity is provided.
1. A semiconductor integrated circuit device comprising:
a motherboard on which a chip set is mounted; and
a memory unit which is mounted on the motherboard and which is connected to the chip set,
wherein a stacked DRAM including a plurality of stacked DRAM chips is used as the memory unit, and
an interposer comprises a silicon unit including wiring for electrically connecting the stacked DRAM and the chip set, and a printed circuit board which is disposed under the silicon unit and which has substantially the same size as that of the silicon unit, the interposer being used for mounting the stacked DRAM on the motherboard, and
a reference plane, which gives a potential reference to the wiring, is disposed in the printed circuit board.
2. The semiconductor integrated circuit device according to claim 1 ,
wherein the reference plane is disposed nearer the motherboard in relation to the silicon unit.
3. The semiconductor integrated circuit device according to claim 2 , further comprising:
an interface LSI for mediating signal transmission/reception between the stacked DRAM and the chip set, the interface LSI being disposed between the stacked DRAM and the interposer,
wherein the interface LSI and the chip set are connected by point-to-point connection via the interposer and the motherboard.
4. The semiconductor integrated circuit device according to claim 3 , wherein the stacked DRAM, the interface LSI, and the interposer form a group, the group comprising a plurality of groups, and
adjoining groups among the plurality of groups are connected by point-to-point connection via the motherboard.
5. The semiconductor integrated circuit device according to claim 1 , wherein the printed circuit board and the motherboard are connected via a coaxial connector.
6. The semiconductor integrated circuit device according to claim 3 , wherein the interface LSI comprises through electrodes and is disposed face up.
7. The semiconductor integrated circuit device according to claim 3 , wherein a common logic circuit required by the stacked DRAM is disposed in the interface LSI.
8. The semiconductor integrated circuit device according to claim 3 , wherein the interface LSI is connected to the stacked DRAM without termination.
9. The semiconductor integrated circuit device according to claim 2 , wherein the stacked DRAM and the interposer form a group, the group comprising a plurality of groups, and
the plurality of groups are connected to the chip set by point-to-point connection or by common connection.
10. The semiconductor integrated circuit device according to claim 9 , wherein signals transmitted/received between the stacked DRAM and the chip set are concentrically assigned to input/output terminals of the interposer according to the attribute of the signals, in which the central axis of the stacked DRAM is the center of concentric circles.
11. The semiconductor integrated circuit device according to claim 2 , wherein the stacked DRAM and the interposer form a group, the group comprising a plurality of groups,
main buses for a command-address signal and main buses for a data signal are disposed in the motherboard such that the main buses for the command-address signal are orthogonal to those for the data signal immediately under each group so that the plurality of groups are connected to the chip set by fly-by connection, and
a stub length from each of the main buses for the command-address signal and the data signal to the stacked DRAM of each group is 2 mm or less.
12. The semiconductor integrated circuit device according to claim 1 , wherein the interposer is a Si interposer-interface LSI for mediating transmission/reception of signals between the stacked DRAM and the chip set.
13. The semiconductor integrated circuit device according to claim 12 , wherein the stacked DRAM and the Si interposer-interface LSI form a group, the group comprising a plurality of groups, and
the plurality of groups are arranged in a matrix pattern, and main buses for a command-address signal and main buses for a data signal are arranged in a grid pattern in the motherboard such that the main buses for the command-address signal are orthogonal to those for the data signal in an area provided
with each group so that the plurality of groups are connected to the chip set by fly-by connection.
14. The semiconductor integrated circuit device according to claim 12 , wherein the stacked DRAM and the Si interposer-interface LSI form a group, the group comprising a plurality of groups, and
the plurality of groups are arranged in a matrix pattern, and main buses for a command-address signal and main buses for a data signal are arranged in parallel in the mother board such that the main buses are parallel to each other immediately under each group so that the plurality of groups are connected to the chip set by fly-by connection.
15. The semiconductor integrated circuit device according to claim 12 , wherein the stacked DRAM and the Si interposer-interface LSI form a group, the group comprising a plurality of groups,
the plurality of groups are arranged in a matrix pattern, and the groups in the nearest row to the chip set are connected to the chip set by point-to-point connection, and
in the groups belonging to the other rows, adjoining groups in each line are connected to each other by point-to-point connection.
16. The semiconductor integrated circuit device according to claim 12 , wherein the plane size of the stacked DRAM is substantially the same as that of the Si interposer-interface LSI.
17. The semiconductor integrated circuit device according to claim 12 , wherein the Si interposer-interface LSI has no through electrode.
18. The semiconductor integrated circuit device according to claim 17 , wherein the Si interposer-interface LSI is used as a supporter in a process of fabricating the stacked DRAM by stacking a plurality of DRAM chips.
19. The semiconductor integrated circuit device according to claim 12 , wherein the Si interposer-interface LSI is connected to the stacked DRAM without termination.
20. The semiconductor integrated circuit device according to claim 1 , wherein the stacked DRAM includes through electrodes, the through electrodes being disposed in a peripheral-circuit area of the plurality of DRAM chips.
21. The semiconductor integrated circuit device according to claim 1 , wherein a decoupling capacitor is disposed on the upper surface of the interposer, the decoupling capacitor being connected between a power-supply line and a ground line.