Temperature control for coarse wavelength division multiplexing systems
View Patent ↗Optoelectronic devices and methods are used to maintain a CWDM transmitter operating within design parameters over an extended ambient temperature range. In order to avoid excessive wavelength drift with temperature shifts, lasers in the CWDM transmitters are heated or cooled to a selected temperature, for example by using a thermoelectric cooler. By heating and cooling the lasers, any wavelength drift that an ambient temperature variation might inflict on the laser is minimized to the range hotter or colder than the selected temperature. As the temperature range of the laser increases above the selected temperature, the AC swing driving the laser is increased to maintain a sufficient extinction ratio for acceptable transmitter performance.
1. A method comprising:
heating a laser diode in an optoelectronic assembly to a set point temperature that is above the typical ambient temperature of the optoelectronic assembly;
operating the laser diode to emit light;
heating or cooling the laser diode to keep the laser within a selected range around the set point temperature; and
upon identifying that the temperature of the laser diode is above the set point, adjusting the AC swing driving the laser diode to maintain the extinction ratio of an optical signal emitted by the laser diode above a specified lower limit.
2. The method of claim 1 , further comprising monitoring the laser diode temperature by a device selected from the group consisting of a temperature sensor in communication with the laser diode; a temperature sensor that is located within the optoelectronic assembly; and a temperature sensor that is located external to the optoelectronic assembly.
3. A method as in claim 1 , wherein the act of heating the laser diode is performed by a thermoelectric cooler.
4. A method as in claim 1 , wherein the AC swing is adjusted by referencing a look up table that indexes AC swing based on laser diode temperature.
5. A method as in claim 1 , wherein the set point temperature comprises at least about 50° C.
6. An optoelectronic device, comprising:
an optoelectronic assembly that includes a laser diode for emitting light;
a laser driver for controlling the operation of the laser diode;
a temperature controller coupled to the laser diode for controlling the temperature of the laser diode;
at least one temperature sensor for detecting a temperature associated with the laser diode;
memory configured to store a look up chart for controlling the AC swing of the laser diode based upon the detected laser diode temperature; and
one or more control apparatuses for generating: a command signal to the temperature controller for controlling the operation of the temperature controller such that the temperature controller maintains the laser diode temperature within a range near a set point temperature; and a command signal to the laser driver for controlling the AC swing of the laser diode based upon the detected laser diode temperature.
7. The optoelectronic device of claim 6 , wherein:
the at least one temperature sensor includes a laser temperature sensor for monitoring a temperature from within the optoelectronic assembly and an external temperature sensor for monitoring an ambient temperature external to the optoelectronic assembly; and
the microprocessor is configured to generate the command signal to the temperature controller as a function of both the temperature within the optoelectronic assembly and the monitored ambient temperature.
8. The optoelectronic device of claim 6 , wherein the temperature controller comprises a thermoelectric cooler.
9. The optoelectronic device of claim 6 , wherein said optoelectronic device comprises a Coarse Wavelength Division Multiplexing (CWDM) module, wherein the CWDM module is configured to operate from a first temperature to a second temperature, wherein the first temperature and the second temperature are separated by a temperature range such that operating a laser diode operating over the entirety of the temperature range would experience a wavelength shift that is larger than 8 nm.