Reducing the contact resistance in organic field-effect transistors with palladium contacts by using nitriles and isonitriles
View Patent ↗A semiconductor device includes a semiconductor section formed from an organic semiconductor material, a first contact for injecting charge carriers into the semiconductor section and a second contact for extracting charge carriers from the semiconductor section, wherein a layer of a nitrile or of an isonitrile is arranged between the first contact and the semiconductor section and/or between the second contact and the semiconductor section. The nitrile or isonitrile acts as a charge transfer molecule facilitating the transfer of charge carriers between contact and organic semiconductor material. This allows the contact resistance between contact and organic semiconductor material to be significantly reduced.
1. A semiconductor device, comprising:
a semiconductor section formed from an organic semiconductor material;
a first contact to inject charge carriers into the semiconductor section; and
a second contact to extract charge carriers from the semiconductor section, the first and/or second contact being built up from palladium, wherein a layer of a nitrile or of an isonitrile is arranged between the first contact and the semiconductor section and/or between the second contact and the semiconductor section.
2. The semiconductor device as claimed in claim 1 , in which the layer of the nitrile or isonitrile is formed as a self-organizing monomolecular layer.
3. The semiconductor device as claimed in claim 1 , in which the nitrile is an aromatic nitrile.
4. The semiconductor device as claimed in claim 1 , in which the nitrile is an aliphatic nitrile.
5. The semiconductor device as claimed in claim 1 , further comprising a gate electrode and a gate dielectric, wherein the semiconductor device comprises a field-effect transistor.
6. The semiconductor device as claimed in claim 3 , in which the aromatic nitrile is a substituted or unsubstituted benzonitrile.