Architecture for coated conductors
View Patent ↗Articles are provided including a base substrate having a layer of an oriented cubic oxide material with a rock-salt-like structure layer thereon, and, a layer of epitaxial titanium nitride upon the layer of an oriented cubic oxide material having a rock-salt-like structure. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of epitaxial titanium nitride or upon a intermediate buffer layer upon the layer of epitaxial titanium nitride.
1. An article comprising:
a base substrate of a flexible polycrystalline metal including a layer of an oriented cubic oxide material having a rock-salt-like structure layer thereon; and,
a layer of epitaxial titanium nitride upon the layer of an oriented cubic oxide material having a rock-salt-like structure.
2. The article of claim 1 wherein the layer of an oriented cubic oxide material having a rock-salt-like structure is of magnesium oxide.
3. The article of claim 1 wherein the layer of an oriented cubic oxide material having a rock-salt-like structure is deposited by ion beam assisted deposition.
4. The article of claim 3 wherein the layer of an oriented cubic oxide material having a rock-salt-like structure is of magnesium oxide.
5. The article of claim 1 wherein the layer of epitaxial titanium nitride has a thickness of from about 10 nanometers to about 100 nanometers.
6. The article of claim 1 wherein the base substrate further includes an inert oxide material layer between the base substrate and the layer of an oriented cubic oxide material having a rock-salt-like structure.
7. The article of claim 1 wherein the base substrate further includes an inert oxide material layer selected from the group consisting of aluminum oxide, erbium oxide, and yttrium oxide on the base substrate, and a layer of an oxide or oxynitride material upon the inert oxide material layer and the layer of an oriented cubic oxide material having a rock-salt-like structure is upon the layer of an oxide or oxynitride material.
8. The article of claim 6 wherein the inert oxide material layer is selected from the group consisting of aluminum oxide, erbium oxide, and yttrium oxide.
9. The article of claim 7 wherein the oxide or oxynitride material layer is selected from the group consisting of yttrium oxide, aluminum oxynitride, erbium oxide, yttria-stabilized zirconia, cerium oxide and europium oxide.
10. The article of claim 1 further including a layer of a buffer material upon the epitaxial layer of titanium nitride.
11. The article of claim 10 wherein said buffer material is selected from the group consisting of strontium ruthenate, strontium titanate, mixtures of strontium ruthenate and strontium titanate, and lanthanum manganate.
12. The article of claim 1 further including a layer of a high temperature superconductive oxide material upon the epitaxial layer of titanium nitride.
13. The article of claim 12 wherein the high temperature superconductive oxide material is a yttrium barium copper oxide (YBCO).
14. The article of claim 11 further including a layer of a high temperature superconductive oxide material upon the layer of buffer material.
15. The article of claim 14 wherein the high temperature superconductive oxide material is a yttrium barium copper oxide (YBCO).
16. The article of claim 13 wherein the layer of a yttrium barium copper oxide includes flux pinning particulates therein.
17. The article of claim 16 wherein the flux pinning particulates are of barium zirconate.
18. The article of claim 15 wherein the layer of a yttrium barium copper oxide includes flux pinning particulates therein.
19. The article of claim 18 wherein the flux pinning particulates are of barium zirconate.