High rate buffer layer for IBAD MgO coated conductors
View Patent ↗Articles are provided including a base substrate having a layer of an oriented material thereon, and, a layer of hafnium oxide upon the layer of an oriented material. The layer of hafnium oxide can further include a secondary oxide such as cerium oxide, yttrium oxide, lanthanum oxide, scandium oxide, calcium oxide and magnesium oxide. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of hafnium oxide or layer of hafnium oxide and secondary oxide.
1. An article comprising:
a base substrate having a layer of an oriented material thereon, the oriented material selected from the group consisting of oriented oxide materials and oriented nitride material; and,
a layer of epitaxial hafnium oxide upon the layer of an oriented material, the layer of hafnium oxide further including a secondary oxide selected from the group consisting of cerium oxide, yttrium oxide, lanthanum oxide, scandium oxide, calcium oxide, and magnesium oxide.
2. The article of claim 1 wherein the layer of hafnium oxide includes cerium oxide.
3. The article of claim 1 wherein the layer of hafnium oxide includes from about 0.1 atomic percent of the secondary oxide to about 90 atomic percent secondary oxide.
4. The article of claim 1 wherein the layer of an oriented material is magnesium oxide.
5. The article of claim 1 wherein the layer of an oriented material includes a first layer deposited by ion beam assisted deposition and a second layer of a homoepitaxial or heteroepitaxial material on the first layer.
6. The article of claim 5 wherein the first layer of an oriented material is magnesium oxide.
7. The article of claim 5 wherein said layer of oriented material includes a first layer of magnesium oxide and a second layer of a homoepitaxial layer of magnesium oxide.
8. The article of claim 5 wherein said layer of oriented material includes a first layer of magnesium oxide and a second layer of a heteroepitaxial layer of titanium nitride.
9. The article of claim 1 wherein the base substrate is a flexible polycrystalline metal.
10. The article of claim 1 wherein the layer of hafnium oxide has a thickness of from about 10 nanometers to about 100 nanometers.
11. The article of claim 1 wherein the base substrate further includes an inert oxide material layer between the base substrate and the layer of an oriented material.
12. The article of claim 11 wherein the inert oxide material layer is selected from the group consisting of aluminum oxide, erbium oxide, and yttrium oxide.
13. The article of claim 1 wherein the base substrate further includes an inert oxide material layer selected from the group consisting of aluminum oxide, erbium oxide, and yttrium oxide on the base substrate, and a layer of an oxide or oxynitride material upon the inert oxide material layer and the layer of an oriented material is upon the layer of an oxide or oxynitride material.
14. The article of claim 13 wherein the oxide or oxynitride material layer is selected from the group consisting of yttrium oxide, aluminum oxynitride, erbium oxide, yttria-stabilized zirconia, cerium oxide and europium oxide.
15. The article of claim 1 further including a layer of a high temperature superconductive oxide material upon the layer of hafnium oxide.
16. The article of claim 15 wherein the high temperature superconductive oxide material is a yttrium barium copper oxide (YBCO).
17. The article of claim 16 wherein the layer of a yttrium barium copper oxide includes selected additional flux pinning particulates therein.
18. The article of claim 17 wherein the flux pinning particulates are of barium zirconate.
19. The article of claim 16 further including a layer of cerium oxide between the layer of hafnium oxide and the YBCO layer.