IP Library › Granted Patent US 6,974,756
Granted Patent B2
US 6,974,756 · App. 11/021,803 · Granted Dec 13, 2005

Methods of forming shallow trench isolation

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Quick Facts
Patent No.
US 6,974,756
App. No.
11/021,803
Granted
Dec 13, 2005
Kind
B2
Abstract

A method of forming a shallow trench isolation is disclosed. An example method of forming a shallow trench isolation performs a planarization process for a substrate on which a hard mask and an insulation layer are formed, selectively etching the insulation layer on the edge of the substrate by using wet etch equipment, and performs a main etching process in the center region of the substrate.

Claims (7)

1. A method of forming an STI comprising:

performing a planarization process for a substrate on which a hard mask and an insulation layer are formed;

selectively etching the insulation layer on the edge of the substrate by using wet etch equipment; and

performing a main etching process in the center region of the substrate.

2. A method as defined by claim 1 , wherein the insulation layer is made of oxide.

3. A method as defined by claim 1 , wherein the insulation layer is formed on the substrate where an STI is formed.

4. A method as defined by claim 1 , wherein the selective etching process over-etches the edge of the substrate by using HF.