IP Library › Granted Patent US 7,002,184
Granted Patent B2
US 7,002,184 · App. 11/022,801 · Granted Feb 21, 2006

Light-emitting device comprising a gallum-nitride-group compound-semiconductor

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Quick Facts
Patent No.
US 7,002,184
App. No.
11/022,801
Granted
Feb 21, 2006
Kind
B2
Abstract

In the light-emitting gallium-nitride-group compound semiconductor devices using a substrate, the operating voltage is lowered and at the same time the occurrence of crack during crystal growth is suppressed, resulting in an improved manufacturing yield rate. The device includes a stacked structure of an n-type layer, a light-emitting layer and a p-type layer formed in the foregoing order on a substrate, and an n-side electrode formed on the surface of the n-type layer. The n-type layer is a laminate layer composed of, in the order from the substrate, first n-type layer and a second n-type layer having a carrier concentration higher than that of the first n-type layer. As the contact resistance between the n-type layer and the n-side electrode formed thereon is reduced, the operating voltage of a light-emitting device is lowered, and the power consumption decreased.

Claims (9)

1. A light-emitting semiconductor device comprising:

an n-type layer formed over an insulating substrate, a portion of said n-type layer being exposed,

a light emitting layer formed over the n-type layer,

a p-type layer formed over the light-emitting layer, and

an electrode formed on the exposed portion of the n-type layer,

wherein the n-type layer comprising a first Si doped GaN layer and a second Si doped GaN layer, a carrier concentration of the second Si doped GaN layer is higher than a carrier of the first Si doped GaN layer, and the thickness of the second Si doped GaN layer is smaller than the thickness of the first Si doped GaN layer, and the thickness of the first n-type Si doped GaN layer is within a range of 1–5 μm.

2. A device according to claim 1 , wherein the carrier concentration of the first Si doped GaN layer is within a range of 1×10 16 to 2×10 18 cm −3 .

3. A device according to claim 2 , wherein the carrier concentration of the second Si doped GaN layer is within a range of 2×10 18 to 1×10 19 cm −3 .

4. A device according to claim 3 , wherein the thickness of the second Si doped GaN layer is within a range of 0.1–0.5 μm.