Active pixel sensor (APS) readout structure with amplification
View Patent ↗An active pixel sensor (APS) includes an array of individually addressable APS cells ad a pixel readout structure that includes an amplifier. The amplifier may have a two-branched structure and provide a gain of one or higher. Additional switches may be provided in the pixels to provide protection for pixel output transistors from voltage changes in the column line. Structure may also be provided for optional gain selection in the amplifier.
1. A method of reading out a signal from an imager pixel in an imager device, said method comprising the acts of:
converting photo-generated charge from a photosensor in the pixel into a first voltage using a first source follower transistor;
outputting the first voltage to a first amplifier branch by activating a row select transistor having a first conductivity type and a first transistor having a second conductivity type that is different than the first conductivity type, the first transistor providing a voltage to the first source follower used in the converting step; and
amplifying the first voltage in a second amplifier branch to form an amplified voltage by activating a second transistor having a same conductivity as the first transistor, a second source follower transistor and a third transistor having a same conductivity as the row select transistor.
2. The method of claim 1 , further comprising the act of outputting the amplified voltage.
3. The method of claim 1 , wherein said amplifying step applies a gain to the first voltage.
4. A method of reading out a signal from an imager pixel in an imager device, said method comprising the acts of:
converting photo-generated charge from a photosensor in the pixel into a first voltage using a first source follower transistor;
outputting the first voltage to a first amplifier branch by activating a row select transistor and a first transistor, the first transistor providing a voltage to the first source follower used in the converting step; and
amplifying the first voltage in a second amplifier branch to form an amplified voltage by activating a second transistor having a same conductivity as the first transistor, a second source follower transistor and a third transistor having a same conductivity as the row select transistor, wherein said amplifying step applies a gain to the first voltage and the applied gain is a unity gain.
5. A method of reading out a signal from an imager pixel in an imager device, said method comprising the acts of:
converting photo-generated charge from a photosensor in the pixel into a first voltage using a first source follower transistor;
outputting the first voltage to a first amplifier branch by activating a row select transistor having a first conductivity type and a first transistor having a second conductivity type that is different than the first conductivity type, the first transistor providing a voltage to the first source follower used in the converting step;
selecting a gain to be applied to the first voltage; and
applying the selected gain to first voltage in a second amplifier branch to form an amplified voltage by activating a second transistor having a same conductivity as the first transistor, a second source follower transistor and a third transistor having a same conductivity as the row select transistor.
6. The method of claim 5 , further comprising the act of outputting the amplified voltage.
7. A method of reading out a signal from an imager pixel in an imager device, said method comprising the acts of:
converting photo-generated charge from a photosensor in the pixel into a first voltage using a first source follower transistor;
outputting the first voltage to a first amplifier branch by activating a row select transistor and a first transistor, the first transistor providing a voltage to the first source follower used in the converting step;
selecting a gain to be applied to the first voltage; and
applying the selected gain to first voltage in a second amplifier branch to form an amplified voltage by activating a second transistor having a same conductivity as the first transistor, a second source follower transistor and a third transistor having a same conductivity as the row select transistor,
wherein the selected gain is a unity gain.