Radio frequency power amplifier
View Patent ↗The present invention provides a radio frequency power amplifier which may not introduce radio frequency loss during switching power amplifier units between high and low output power levels. By connecting a first-stage matching network M12 and first-stage matching network M13 to respective output nodes of a power amplifier unit A11 and power amplifier unit A12 that either one operate by switching, connecting the output nodes of the first-stage matching network M12 and M13 in parallel, connecting a last-stage matching network M11 between the junction of M12 and M13 and the output terminal OUT, the first-stage matching networks M12, M13, and last-stage matching network M11 are formed, for both power amplifier units A11 and A12, so that impedance matching is established between the output terminal OUT and the power amplifier unit in operation when one unit is in operation the other is in stop of operation. The present invention allows switching from one power amplifier unit to the other without the need of a radio frequency switch.
1. A radio frequency power amplifier, comprising:
at least two power amplifier units, having a different saturated output power level from each other, one of the units being in operation by switching;
first-stage output matching networks, each connected to an output node of respective one of said at least two power amplifier units; and
a last-stage output matching network, connected between an output terminal and a junction permanently connecting output nodes of the first-stage output matching networks together in parallel independently of ON/OFF switching of said at least two power amplifier units,
wherein, when any one of said at least two power amplifier units is in operation and the other in stop of operation, the first-stage output matching networks and the last-stage matching network are formed so that impedance matching is established between the output impedance of the power amplifier unit in operation and the output characteristic impedance at the output terminal, for each of said at least two power amplifier units,
wherein said last-stage matching network is fixed in a circuit element value thereof independently of ON/OFF switching of said at least two power amplifier units, and
wherein said at least two power amplifier units are in operation at different frequency bands each other.
2. The radio frequency power amplifier according to claim 1 ,
wherein the length of signal transmission line used for said first-stage output matching network connected to the power amplifier unit having larger saturation output power level from within said at least two power amplifier units is shorter than the length of signal transmission line used for said first-stage output matching network connected to the power amplifier unit having smaller saturation output level from within said at least two power amplifier units.
3. The radio frequency power amplifier according to claim 1 , further comprising:
last-stage input matching networks, each connected to the input node of respective one of said at least two power amplifier units; and
a first-stage input matching network, connected between the junction connecting input nodes of said last-stage input matching networks together in parallel and an input terminal,
wherein said first stage output matching networks and said last-stage output matching network are formed so that impedance matching is established between the output impedance of the power amplifier unit in operation and the output impedance at the output terminal, for each of said at least two power amplifier units,
wherein said first-stage input matching network and said last-stage input matching networks are formed so that impedance matching is established between the input impedance of the power amplifier unit in operation and the input characteristic impedance at the input terminal, for each of said at least two power amplifier units, and
wherein said last-stage output matching network is fixed in a circuit element value thereof independently of ON/OFF switching of said at least two power amplifier units.
4. The radio frequency power amplifier according to claim 3 ,
wherein the length of signal transmission line used for said first-stage output matching network connected to the power amplifier unit having larger saturation output power level from within said at least two power amplifier units is shorter than the length of signal transmission line used for said first-stage output matching network connected to the power amplifier unit having smaller saturation output level from within said at least two power amplifier units.
5. A radio frequency power amplifier, comprising:
at least two power amplifier units, having a different saturated output power level from each other, one of the units being in operation by switching;
first-stage output matching, networks, each connected to an output node of respective one of said at least two power amplifier units; and
a last-stage output matching network, connected between an output terminal and a junction permanently connecting output nodes of the first-stage output matching networks together in parallel independently of ON/OFF switching of said at least two power amplifier units,
wherein, when any one of said at least two power amplifier units is in operation and the other in stop of operation, the first-stage output matching networks and the last-stage matching network are formed so that impedance matching is established between the output impedance of the power amplifier unit in operation and the output characteristic impedance at the output terminal, for each of said at least two power amplifier units,
wherein said last-stage matching network is fixed in a circuit element value thereof independently of ON/OFF switching of said at least two power amplifier units, and
wherein said at least two power amplifier units and said first-stage and second-stage output matching networks are formed monolithically in a single semiconductor chip.
6. The radio frequency power amplifier according to claim 5 ,
wherein the length of signal transmission line used for said first-stage output matching network connected to the power amplifier unit having larger saturation output power level from within said at least two power amplifier units is shorter than the length of signal transmission line used for said first-stage output matching network connected to the power amplifier unit having smaller saturation output level from within said at least two power amplifier units.
7. The radio frequency power amplifier according to claim 5 , further comprising:
last-stage input matching networks, each connected to the input node of respective one of said at least two power amplifier units; and
a first-stage input matching network, connected between the junction connecting input nodes of said last-stage input matching networks together in parallel and an input terminal,
wherein said first-stage output matching networks and said last-stage output matching network are formed so that impedance matching is established between the output impedance of the power amplifier unit in operation and the output impedance at the output terminal, for each of said at least two power amplifier units,
wherein said first-stage input matching network and said last-stage input matching networks are formed so that impedance matching is established between the input impedance of the power amplifier unit in operation and the input characteristic impedance at the input terminal, for each of said at least two power amplifier units,
wherein said last-stage output matching network is fixed in a circuit element value thereof independently of ON/OFF switching of said at least two power amplifier units, and
wherein said first-stage and second-stage input matching networks are formed monolithically in a single semiconductor chip together with said at least two power amplifier units and said first-stage and second-stage output matching networks.
8. The radio frequency power amplifier according to claim 7 ,
wherein the length of signal transmission line used for said first-stage output matching network connected to the power amplifier unit having larger saturation output power level from within said at least two power amplifier units is shorter than the length of signal transmission line used for said first-stage output matching network connected to the power amplifier unit having smaller saturation output level from within said at least two power amplifier units.
9. A radio frequency power amplifier, comprising:
a plurality of power amplifier units, having a different saturated output power level from each other, one of the units being in operation by switching;
a same number of first-stage output matching networks as said plurality of power amplifier units, each connected to an output node of respective one of said plurality of power amplifier units; and
a single last-stage output matching network, connected between an output terminal and a junction permanently connecting output nodes of the first-stage output matching networks together in parallel independently of ON/OFF switching of said plurality of power amplifier units,
wherein, when any one of said plurality of power amplifier units is in operation and the other in stop of operation, the first-stage output matching networks and the last-stage matching network are formed so that impedance matching is established between the output impedance of the power amplifier unit in operation and the output characteristic impedance at the output terminal, for each of said plurality of power amplifier units,
wherein said last-stage matching network is fixed in a circuit element value thereof independently of ON/OFF switching of said plurality of power amplifier units, and
wherein said plurality of power amplifier units are in operation at different frequency bands each other.
10. The radio frequency power amplifier according to claim 9 ,
wherein the length of signal transmission line used for said first-stage output matching network connected to the power amplifier unit having larger saturation output power level from within said plurality of power amplifier units is shorter than the length of signal transmission line used for said first-stage output matching network connected to the power amplifier unit having smaller saturation output level from within said plurality of power amplifier units.
11. The radio frequency power amplifier according to claim 9 , further comprising:
a same number of last-stage input matching networks as said plurality of power amplifier units, each connected to the input node of respective one of said plurality of power amplifier units; and
a single first-stage input matching network, connected between the junction connecting input nodes of said last-stage input matching networks together in parallel and an input terminal,
wherein said first-stage output matching networks and said last-stage output matching network are formed so that impedance matching is established between the output impedance of the power amplifier unit in operation and the output impedance at the output terminal, for each of said plurality of power amplifier units,
wherein said first-stage input matching network and said last-stage input matching networks are formed so that impedance matching is established between the input impedance of the power amplifier unit in operation and the input characteristic impedance at the input terminal, for each of said plurality of power amplifier units, and
wherein said last-stage output matching network is fixed in a circuit element value thereof independently of ON/OFF switching of said plurality of power amplifier units.
12. The radio frequency power amplifier according to claim 11 ,
wherein the length of signal transmission line used for said first-stage output matching network connected to the power amplifier unit having larger saturation output power level from within said plurality of power amplifier units is shorter than the length of signal transmission line used for said first-stage output matching network connected to the power amplifier unit having smaller saturation output level from within said plurality of power amplifier units.
13. The radio frequency power amplifier according to claim 1 ,
wherein said at least two power amplifier units and said first-stage and second-stage output matching networks are formed monolithically in a single semiconductor chip.
14. The radio frequency power amplifier according to claim 13 ,
wherein the length of signal transmission line used for said first-stage output matching network connected to the power amplifier unit having larger saturation output power level from within said at least two power amplifier units is shorter than the length of signal transmission line used for said first-stage output matching network connected to the power amplifier unit having smaller saturation output level from within said at least two power amplifier units.
15. The radio frequency power amplifier according to claim 13 , further comprising:
last-stage input matching networks, each connected to the input node of respective one of said at least two power amplifier units; and
a first-stage input matching network, connected between the junction connecting input nodes of said last-stage input matching networks together in parallel and an input terminal,
wherein said first-stage output matching networks and said last-stage output matching network are formed so that impedance matching is established between the output impedance of the power amplifier unit in operation and the output impedance at the output terminal, for each of said at least two power amplifier units,
wherein said first-stage input matching network and said last-stage input matching networks are formed so that impedance matching is established between the input impedance of the power amplifier unit in operation and the input characteristic impedance at the input terminal, for each of said at least two power amplifier units,
wherein said last-stage output matching network is fixed in a circuit element value thereof independently of ON/OFF switching of said at least two power amplifier units, and
wherein said first-stage and second-stage input matching networks are formed monolithically in a single semiconductor chip together with said at least two power amplifier units and said first-stage and second-stage output matching networks.
16. The radio frequency power amplifier according to claim 15 ,
wherein the length of signal transmission line used for said first-stage output matching network connected to the power amplifier unit having larger saturation output power level from within said at least two power amplifier units is shorter than the length of signal transmission line used for said first-stage output matching network connected to the power amplifier unit having smaller saturation output level from within said at least two power amplifier units.
17. The radio frequency power amplifier according to claim 9 ,
wherein said plurality of power amplifier units and said first-stage and second-stage output matching networks are formed monolithically in a single semiconductor chip.
18. The radio frequency power amplifier according to claim 17 ,
wherein the length of signal transmission line used for said first-stage output matching network connected to the power amplifier unit having larger saturation output power level from within said plurality of power amplifier units is shorter than the length of signal transmission line used for said first-stage output matching network connected to the power amplifier unit having smaller saturation output level from within said plurality of power amplifier units.
19. The radio frequency power amplifier according to claim 17 , further comprising:
last-stage input matching networks, each connected to the input node of respective one of said plurality of power amplifier units; and
a first-stage input matching network, connected between the junction connecting input nodes of said last-stage input matching networks together in parallel and an input terminal,
wherein said first-stage output matching networks and said last-stage output matching network are formed so that impedance matching is established between the output impedance of the power amplifier unit in operation and the output impedance at the output terminal, for each of said plurality of power amplifier units,
wherein said first-stage input matching network and said last-stage input matching networks are formed so that impedance matching is established between the input impedance of the power amplifier unit in operation and the input characteristic impedance at the input terminal, for each of said plurality of power amplifier units,
wherein said last-stage output matching network is fixed in a circuit element value thereof independently of ON/OFF switching of said plurality of power amplifier units, and
wherein said first-stage and second-stage input matching networks are formed monolithically in a single semiconductor chip together with said plurality of power amplifier units and said first-stage and second-stage output matching networks.
20. The radio frequency power amplifier according to claim 19 ,
wherein the length of signal transmission line used for said first-stage output matching network connected to the power amplifier unit having larger saturation output power level from within said plurality of power amplifier units is shorter than the length of signal transmission line used for said first-stage output matching network connected to the power amplifier unit having smaller saturation output level from within said plurality of power amplifier units.