Method for forming organic/inorganic hybrid insulation film
View Patent ↗A method for forming an organic/inorganic hybrid insulation film includes the following steps. An organic silicon compound containing siloxane bonds is vaporized, the vaporized organic silicon compound is transported to a reaction chamber maintaining the compound in a monomer state, and then, the organic/inorganic hybrid insulation film having a main chain structure where siloxane parts and organic molecule parts are alternately combined on a substrate installed in the reaction chamber is formed by plasma-polymerizing the vaporized organic silicon compound in the reaction chamber.
1. A method for forming an organic/inorganic hybrid insulation film comprising:
a step for vaporizing an organic silicon compound containing siloxane bonds;
a step for transporting the vaporized organic silicon compound to a reaction chamber while maintaining the compound in a monomer state; and
a step for forming the organic/inorganic hybrid insulation film having a main chain structure where siloxane parts and organic molecule parts are alternately combined on a substrate installed in the reaction chamber by plasma-polymerizing the vaporized organic silicon compound in the reaction chamber,
wherein the organic silicon compound contains a plurality of silicon atoms which are siloxane-bonded, and a plurality of organic groups respectively combined with the plurality of silicon atoms,
at least two of the plurality of organic groups are any of organic groups other than methyl group, and
the plasma polymerization is performed without using an oxidizing agent to inhibit combination of the siloxane parts.
2. The method for forming the organic/inorganic hybrid insulation film as claimed in claim 1 , wherein
the organic silicon compound has a straight-chain siloxane structure.
3. The method for forming the organic/inorganic hybrid insulation film as claimed in claim 2 , wherein
the organic silicon compound is any of 1,3-diphenyl-1,1,3,3-tetramethyldisiloxane, 1,3-dimethyl-1,1,3,3-tetraphenyldisiloxane, 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 1,3-dimethyl-1,1,3,3-tetravinyldisiloxane, hexaphenyldisiloxane, and hexavinyldisiloxane.
4. The method for forming the organic/inorganic hybrid insulation film as claimed in claim 1 , wherein
at least two of the plurality of organic groups are any of organic groups including ethyl group, propyl group, butyl group (including cyclobutyl group), pentyl group (including cyclopentyl group), hexyl group (including cyclohexyl group), vinyl group, derivative of the vinyl group, phenyl group, and derivative of the phenyl group, and
the remainder of the plurality of organic groups are any of organic groups including methyl group, ethyl group, propyl group, butyl group (including cyclobutyl group), pentyl group (including cyclopentyl group), hexyl group (including cyclohexyl group), vinyl group, derivative of the vinyl group, phenyl group, and derivative of the phenyl group.
5. The method for forming the organic/inorganic hybrid insulation film as claimed in claim 1 , wherein
at least three of the plurality of organic groups are any of organic groups including ethyl group, propyl group, butyl group (including cyclobutyl group), pentyl group (including cyclopentyl group), hexyl group (including cyclohexyl group), vinyl group, derivative of the vinyl group, phenyl group, and derivative of the phenyl group.
6. The method for forming the organic/inorganic hybrid insulation film as claimed in claim 1 , wherein
at least two of the plurality of organic groups are any of organic groups including ethyl group, propyl group, butyl group (including cyclobutyl group), pentyl group (including cyclopentyl group), hexyl group (including cyclohexyl group), vinyl group, derivative of the vinyl group, phenyl group, and derivative of the phenyl group, and
the at least two of the organic groups are combined with at least two different silicon atoms of the plurality of silicon atoms.
7. The method for forming the organic/inorganic hybrid insulation film as claimed in claim 1 , wherein
the organic silicon compound has a cyclic siloxane structure.
8. The method for forming the organic/inorganic hybrid insulation film as claimed in claim 7 , wherein
the organic silicon compound is any of 1,3-diphenyl-1,3,5,5-tetramethylcyclotrisiloxane, 1,3,5-triphenyl-1,3,5-trimethylcyclotrisiloxane, 1,3-divinyl-1,3,5,5-tetramethylcyclotrisiloxane, 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane, 1,3-diphenyl-1,3,5,5,7,7-hexamethylcyclotetrasiloxane, 1,5-diphenyl-1,3,3,5,7,7-hexamethylcyclotetrasiloxane, 1,3,5-triphenyl-1,3,5,7,7-tetramethylcyclotetrasiloxane, 1,3,-divinyl-1,3,5,5,7,7-hexamethylcyclotetrasiloxane, 1,5-divinyl-1,3,3,5,7,7-hexamethylcyclotetrasiloxane, and 1,3,5-trivinyl-1,3,5,7,7-tetramethylcyclotetrasiloxane.
9. The method for forming the organic/inorganic hybrid insulation film as claimed in claim 1 , wherein at least two of the plurality of organic groups are any of organic groups including ethyl group, propyl group, and butyl group (including cyclobutyl group).
10. A method for forming an organic/inorganic hybrid insulation film comprising:
a step for vaporizing an organic silicon compound containing siloxane bonds preventing the compound from being thermally polymerized;
a step for transporting the vaporized organic silicon compound to a reaction chamber; and
a step for forming the organic/inorganic hybrid insulation film having a main chain structure where siloxane parts and organic molecule parts are alternately combined on a substrate installed in the reaction chamber by plasma-polymerizing the vaporized organic silicon compound in the reaction chamber,
wherein the organic silicon compound contains a plurality of silicon atoms which are siloxane-bonded, and a plurality of organic groups respectively combined with the plurality of silicon atoms,
at least two of the plurality of organic groups are any of organic groups other than methyl group, and
the plasma polymerization is performed without using an oxidizing agent to inhibit combination of the siloxane parts.
11. A method for forming an organic/inorganic hybrid insulation film comprising:
a step for vaporizing an organic silicon compound containing siloxane bonds;
a step for transporting the vaporized organic silicon compound to a reaction chamber while maintaining the compound in a monomer state; and
a step for forming the organic/inorganic hybrid insulation film having a main chain structure where siloxane parts and organic molecule parts are alternately combined on a substrate installed in the reaction chamber by plasma-polymerizing the vaporized organic silicon compound in the reaction chamber,
wherein the organic silicon compound contains a plurality of silicon atoms which are siloxane-bonded, and a plurality of organic groups respectively combined with the plurality of silicon atoms,
at least two of the plurality of organic groups are any of organic groups other than methyl group, and
the plasma polymerization is performed in a non-oxidizing atmosphere to inhibit combination of the siloxane parts.
12. A method for forming an organic/inorganic hybrid insulation film comprising:
a step for vaporizing an organic silicon compound containing siloxane bonds preventing the compound from being thermally polymerized;
a step for transporting the vaporized organic silicon compound to a reaction chamber; and
a step for forming the organic/inorganic hybrid insulation film having a main chain structure where siloxane parts and organic molecule parts are alternately combined on a substrate installed in the reaction chamber by plasma-polymerizing the vaporized organic silicon compound in the reaction chamber,
wherein the organic silicon compound contains a plurality of silicon atoms which are siloxane-bonded, and a plurality of organic groups respectively combined with the plurality of silicon atoms,
at least two of the plurality of organic groups are any of organic groups other than methyl group, and
the plasma polymerization is performed in a non-oxidizing atmosphere to inhibit combination of the siloxane parts.