Thin film transistor device utilizing transistors of differing material characteristics
View Patent ↗A first insulating film is formed. Then, a gate electrode of a low voltage drive thin film transistor and a mask film for covering a region constituting a channel of a high voltage drive thin film transistor are formed with a molybdenum film on the first insulating film. An impurity is implanted into a semiconductor film while using the gate electrode and the mask film as a mask, thereby forming a high density impurity region. Thereafter, the impurity is activated by performing a thermal process under a condition at 500° C. and for 2 hours, for example. Subsequently, the mask film is removed and a second insulating film is formed. A gate electrode of the high voltage drive thin film transistor is formed with an aluminum alloy on the second insulating film.
1. A thin film transistor device comprising:
a substrate;
a first thin film transistor formed on the substrate and having a single layer first gate electrode, a first insulating film as a first gate insulating film and a first laminated film formed directly on the first gate electrode; and
a second thin film transistor formed on the substrate and having a single layer second gate electrode and a second laminated film formed directly on the second gate electrode, said second thin film transistor also having the first laminated film and the first insulating film as a second gate insulating film,
wherein a material of the first gate electrode of the first thin film transistor is selected to include any one element of molybdenum, titanium, chromium, tungsten and tantalum as a main component, and a material of the second gate electrode of the second thin film transistor is selected to be different from the material of the first gate electrode and include any one element of aluminum, silver and copper as a main component,
wherein the material of the first and second gate electrodes of the first and second thin film transistor are selected so that the second gate electrode of the second thin film transistor has a lower resistance and a lower melting point than the first gate electrode of the first thin film transistor.
2. The thin film transistor device according to claim 1 ,
wherein the first thin film transistor does not include a lightly doped drain region, and
the second thin film transistor includes the lightly doped drain region.
3. The thin film transistor device according to claim 1 ,
wherein each of the first thin film transistor and the second thin film transistor includes a lightly doped drain region,
the first gate electrode of the first thin film transistor entirely covers an upper part of the lightly doped drain region, and
the second gate electrode of the second thin film transistor partially covers an upper part of the lightly doped drain region.
4. The thin film transistor device according to claim 1 ,
wherein the second thin film transistor is driven by a higher voltage than the first thin film transistor.