Absorbing layers for reduced spontaneous emission effects in an integrated photodiode
View Patent ↗An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.
1. An optical structure comprising:
a VCSEL, the VCSEL comprising:
a top DBR mirror;
an active region coupled to the top DBR mirror; and
a bottom DBR mirror coupled to the active region;
a photodiode coupled to the VCSEL;
a p-type layer and an n-type layer disposed between the VCSEL and the photodiode;
an absorbing material disposed between the p-type layer and the n-type layer, the absorbing material comprising a composition configured to absorb optical emissions, wherein the absorbing material is designed to be substantially transparent to a laser emission wavelength of the VCSEL and substantially absorbing at spontaneous emission wavelengths of the VCSEL.
2. The optical structure of claim 1 , wherein the absorbing material comprises a composition configured to have higher absorption of optical emissions below a given wavelength.
3. The optical structure of claim 2 , wherein the given wavelength is at a laser wavelength for the VCSEL.
4. The optical structure of claim 2 , wherein the optical structure comprises AlGaAs semiconductor material and wherein the absorbing material comprises an aluminum composition configured to exhibit absorption below the given wavelength.
5. The optical structure of claim 1 , wherein the absorbing material has a low photoluminescence efficiency.
6. The optical structure of claim 5 , wherein the absorbing material is highly doped to decrease the photoluminescence efficiency.
7. The optical structure of claim 5 , wherein the absorbing material is grown in suboptimal conditions such that the absorbing material has low photoluminescence efficiency.
8. The optical structure of claim 1 , wherein the absorbing material is an epitaxial layer that extends across the optical structure.
9. The optical structure of claim 1 , wherein the p-type layer and the n-type layer are shorted together with a metal deposition.
10. The optical structure of claim 1 , further comprising an optical aperture between the VCSEL and photodiode to block a portion of off-axis spontaneous emissions.
11. An optical structure comprising:
a VCSEL, the VCSEL comprising:
a top DBR mirror;
an active region coupled to the top DBR mirror; and
a bottom DBR mirror coupled to the active region; and
a photodiode coupled to the VCSEL,
wherein at least one of the top DBR mirror and the bottom DBR mirror comprises an even number of ¾ wavelength periods.
12. The optical structure of claim 1 , wherein the photodiode comprises an increased bandgap to reduce responsivity of the photodiode above a laser emission.
13. The optical structure of claim 1 further comprising a DBR mirror on a side of the photodiode opposite the VCSEL.
14. A method of manufacturing an optical structure comprising:
forming a VCSEL, forming the VCSEL comprising:
forming a top DBR mirror;
forming an active region coupled to the top DBR mirror; and
forming a bottom DBR mirror coupled to the active region;
forming a photodiode coupled to the VCSEL; and
forming a p-type layer and an n-type layer between the VCSEL and the photodiode;
forming an absorbing material disposed between the p-type layer and the n-type layer, the absorbing material comprising a composition configured to have higher absorption of the optical emissions below a given wavelength, wherein the absorbing material is designed to be substantially transparent to a laser emission wavelength of the VCSEL and substantially absorbing at spontaneous emission wavelengths of the VCSEL.
15. The method of claim 14 , wherein the absorbing material is located in the VCSEL at one or more locations at or near where a standing E-field for a laser emission is at a local minimum.
16. The method of claim 14 , wherein the absorbing material is highly doped to decrease the photoluminescence efficiency.
17. The method of claim 14 , further comprising forming a metal layer that shorts the p-type layer and the n-type layer.
18. The method of claim 14 , further comprising an optical aperture between the VCSEL and photodiode to block a portion of off-axis spontaneous emissions.