Fluid ejection device structures and methods therefor

1. A method of manipulating plasma sheath formation comprising:

applying a material layer to at least one surface of a semiconductor substrate; and

manipulating the material layer to form a surface topography corresponding to a channel, said surface topography being configured to control directionality of ion bombardment of said substrate substantially along electromagnetic field lines in a plasma sheath coupled to said surface topography.

2. The method of manipulating plasma sheath formation as in claim 1 , wherein said manipulating said material layer comprises providing a gray scale mask configured with a pattern corresponding to said fluid channel and exposing said material layer to sufficient light radiation energy through said gray scale mask.

3. The method of manipulating plasma sheath formation as in claim 1 , wherein said manipulating said material layer comprises contact printing said material layer with a stamp.

4. The method of manipulating plasma sheath formation as in claim 3 , wherein said stamp comprises a plurality of units geometrically corresponding to said fluid channel.

5. The method of manipulating plasma sheath formation as in claim 1 , wherein said surface topography corresponds to a pattern of a gray scale mask.

6. The method of manipulating plasma sheath formation as in claim 1 , further comprising manipulating the electron temperature of said plasma.

7. The method of manipulating plasma sheath formation as in claim 1 , further comprising manipulating the voltage of said plasma.

8. The method of manipulating plasma sheath formation as in claim 1 , wherein said channel is offset.

9. The method of manipulating plasma sheath formation as in claim 1 , wherein said fluid channel comprises a plurality of vias.

10. A method of forming a channel in a semiconductor substrate comprising:

applying a material layer to at least one surface of a semiconductor substrate;

manipulating said material layer with a patterning element to form a surface topography corresponding to a channel, said surface topography being configured to control directionality of ion bombardment of said substrate substantially along electromagnetic field lines in a plasma sheath coupled to said surface topography; and

etching said substrate to form said channel.

11. The method of forming a channel as in claim 10 , wherein said patterning element comprises a gray scale mask.

12. The method of forming a channel as in claim 10 , wherein said patterning element comprises a contact print stamp.

13. A method for manufacturing a printhead for an ink jet printer, the method comprising:

applying a material layer to at least one surface of a semiconductor substrate; and

manipulating the material layer to form a surface topography corresponding to a channel to be formed by an etch and based on expected ion travel through a plasma sheath coupled to said surface topography;

etching said substrate to form said channel; and

attaching said semiconductor substrate to a nozzle plate, an electrical circuit and a printhead body to form an ink jet printhead.

14. The method of manufacturing a printhead as in claim 13 , wherein said manipulating said material layer comprises providing a gray scale mask configured with a pattern corresponding to said fluid channel and exposing said material layer to sufficient light radiation energy through said gray scale mask.

15. The method of manufacturing a printhead as in claim 13 , wherein said manipulating said material layer comprises applying a stamp to said material layer.

16. A method of controlling the directionality of an etch comprising:

manipulating a topography of a semiconductor substrate to correspond to a channel to be formed by an etch and based on expected ion travel through a plasma sheath coupled to said topography; and

etching said substrate to form said channel.

17. The method of controlling the directionality of an etch as in claim 16 , further comprising applying a material layer to a surface of the semiconductor substrate.

18. The method of controlling the directionality of an etch as in claim 16 , wherein said channel is offset.

19. A method of forming an offset fluid channel in a semiconductor substrate comprising controlling directionality of ion bombardment along electromagnetic field lines in a plasma sheath to form the offset fluid channel.