High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters
View Patent ↗A monolithic, multi-bandgap, tandem solar photovoltaic converter has at least one, and preferably at least two, subcells grown lattice-matched on a substrate with a bandgap in medium to high energy portions of the solar spectrum and at least one subcell grown lattice-mismatched to the substrate with a bandgap in the low energy portion of the solar spectrum, for example, about 1 eV.
1. A monolithic, multi-bandgap, tandem solar photovoltaic converter, comprising:
at least one subcell grown lattice-matched in relation to a substrate with a bandgap at least as high as a medium energy range; and
at least one subcell grown lattice-mismatched in relation to the substrate with a bandgap in a low energy range such that at least a portion of the at least one subcell with the bandgap in a low energy range is grown over the at least one subcell with the bandgap at least as high as a medium energy range.
2. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 1 , including:
at least one subcell grown lattice-matched in relation to the substrate with a bandgap in the medium energy range; and
at least one subcell grown lattice-matched in relation to the substrate with a bandgap in the high energy range.
3. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 1 , including a compositionally graded layer between said subcell with the bandgap at least as high as the medium range and said subcell with the bandgap in the low energy range, said graded layer having a bandgap that is at least as high as said subcell that has the bandgap at least as high as the medium range.
4. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 1 , wherein the substrate comprises GaAs.
5. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 1 , wherein the substrate comprises Ge.
6. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 5 , wherein the substrate comprises SiGe.
7. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 4 , wherein the substrate comprises GaAs bonded onto Si.
8. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 1 , wherein the substrate is a compliant substrate.
9. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 1 , wherein the substrate is positioned between said at least one lattice-matched subcell and said at least one lattice-matched subcell.
10. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 9 , including a graded layer positioned between the substrate and said at least one lattice-mismatched layer.
11. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 10 , wherein the substrate has a first lattice constant and said at least one lattice-mismatched subcell has a second lattice constant, and wherein the graded layer is compositionally graded to start with a lattice constant that matches the first lattice constant and to end with a lattice constant that matches the second lattice constant.
12. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 1 , wherein the at least one lattice-matched subcell comprises Ga x In 1−x As y P 1−y and the at least one lattice-mismatched subcell comprises Ga x In 1−x As.
13. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 12 , wherein the at least one lattice-matched subcell has a bandgap of about 1.7 eV and the at least one lattice-mismatched subcell has a bandgap of about 1.1 eV.
14. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 1 , wherein the at least one lattice-matched subcell comprises Al z Ga 1−z As and the at least one lattice-mismatched subcell comprises Ga x In 1−x As.
15. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 14 , wherein the at least one lattice-matched subcell has a bandgap of about 1.7 eV and the at least one lattice-mismatched subcell has a bandgap of about 1.1 eV.
16. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 1 , wherein the at least one lattice-matched subcell comprises Ga x In 1−x P and the at least one lattice-mismatched subcell comprises Ga x In 1−x As.
17. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 16 , wherein the at least one lattice-matched subcell has a bandgap of about 1.8 eV and the at least one lattice-mismatched subcell has a bandgap of about 1.2 eV.
18. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 2 , wherein the at least one lattice-matched subcell in the high energy range comprises (Al)Ga x In 1−x P, the at least one lattice-matched subcell in the medium energy range comprises (In)GaAs, and the at least one lattice-mismatched subcell comprises Ga x In 1−x As.
19. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 18 , wherein the at least one lattice-matched subcell in the high energy range has a bandgap of about 1.9 eV, the at least one lattice-matched subcell in the medium energy range has a bandgap of about 1.4 eV, and the at least one lattice-mismatched subcell has a bandgap of about 1.0 eV.
20. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 2 , wherein the at least one lattice-matched subcell in the high energy range comprises Al z Ga 1−z As, the at least one lattice-matched subcell in the medium energy range comprises (In)GaAs, and the at least one lattice-mismatched subcell comprises Ga x In 1−x As.
21. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 20 , wherein the at least one lattice-matched subcell in the high energy range has a bandgap of about 1.9 eV, the at least one lattice-matched subcell in the medium energy range has a bandgap of about 1.4 eV, and the at least one lattice-mismatched subcell has a bandgap of about 1.0 eV.
22. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 2 , including at least two lattice-matched subcells in the high energy range, at least one lattice-matched subcell in the medium energy range, at least one lattice-mismatched subcell in the low energy range.
23. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 22 , wherein at least one of the lattice-matched subcells in the high energy range comprises (Al)Ga x In 1−x P, at least another one of the lattice-matched subcells in the high energy range comprises (Al)Ga x In 1−x As y P 1−y , the at least one lattice-matched subcell in the medium energy range comprises (In)GaAs, and the at least one lattice-mismatched subcell comprises Ga x In 1−x As.
24. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 23 , wherein said at least one of the lattice-matched subcells in the high energy range that comprises (Al)Ga x In 1−x P has a bandgap of about 1.9 eV, said at least another one of the lattice-matched subcells in the high energy range that comprises (Al)Ga x In 1−x As y P 1−y has a bandgap of about 1.7 eV, said at least one lattice-matched subcell in the medium energy range that comprises (In)GaAs has a bandgap of about 1.4 eV, and said at least one lattice-mismatched subcell that comprises Ga x In 1−x As has a bandgap of about 1.1 eV.
25. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 22 , wherein at least one of the lattice-matched subcells in the high energy range comprises (Al)Ga x In 1−x P, at least another one of the lattice-matched subcells in the high energy range comprises Al z Ga 1−z As, the at least one lattice-matched subcell in the medium energy range comprises (In)GaAs, and the at least one lattice-mismatched subcell comprises Ga x In 1−x As.
26. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 25 , wherein said at least one of the lattice-matched subcells in the high energy range that comprises (Al)Ga x In 1−x P has a bandgap of about 1.9 eV, said at least another one of the lattice-matched subcells in the high energy range that comprises Al z Ga 1−x As has a bandgap of about 1.7 eV, said at least one lattice-matched subcell in the medium energy range that comprises (In)GaAs has a bandgap of about 1.4 eV, and said at least one lattice-mismatched subcell that comprises Ga x In 1−x As has a bandgap of about 1.1 eV.
27. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 22 , including at least three lattice-matched subcells in the high energy range, at least one lattice-matched subcell in the medium energy range, and at least one lattice-mismatched subcell in the low energy range.
28. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 27 , wherein at least two of the lattice-matched subcells in the high energy range have bandgaps that are the same as each other.
29. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 28 , wherein said at least two lattice-matched subcells in the high energy range that have the same bandgaps as each comprise (Al)Ga x In 1−x P, at least one of the lattice-matched subcells in the high energy range comprises (Al)Ga x In 1−x As y P 1−y , the at least one lattice-matched subcell in the medium energy range comprises (In)GaAs, and the at least one lattice-mismatched subcell comprises Ga x In 1−x As.
30. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 29 , wherein said at least two lattice-matched subcells in the high energy range that have the same bandgaps and comprise (Al)Ga x In 1−x P have bandgaps of about 1.9 eV, said at least one of the lattice-matched subcells in the high energy range that comprises (Al)Ga x In 1−x As y P 1−y has a bandgap of about 1.7 eV, the at least one lattice-matched subcell in the medium energy range that comprises (In)GaAs has a bandgap of about 1.4 eV, and the at least one lattice-mismatched subcell that comprises Ga x In 1−x As has a bandgap of about 1.1 eV.
31. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 28 , wherein said at least two lattice-matched subcells in the high energy range that have the same bandgaps as each comprise (Al)Ga x In 1−x P, at least one of the lattice-matched subcells in the high energy range comprises Al z Ga 1−z As, the at least one lattice-matched subcell in the medium energy range comprises (In)GaAs, and the at least one lattice-mismatched subcell comprises Ga x In 1−x As.
32. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 31 , wherein said at least two lattice-matched subcells in the high energy range that have the same bandgaps and comprise (Al)Ga x In 1−x P have bandgaps of about 1.9 eV, said at least one of the lattice-matched subcells in the high energy range that comprises Al z Ga 1−z As has a bandgap of about 1.7 eV, the at least one lattice-matched subcell in the medium energy range that comprises (In)GaAs has a bandgap of about 1.4 eV, and the at least one lattice-mismatched subcell that comprises Ga x In 1−x As has a bandgap of about 1.1 eV.
33. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 27 , including at least three lattice-matched subcells in the high energy range, at least one lattice-matched subcell in the medium energy range, and at least two lattice-mismatched subcells in the low energy range.
34. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 33 , wherein at least two of the lattice-matched subcells in the high energy range have bandgaps that are the same as each other.
35. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 28 , wherein said at least two lattice-matched subcells in the high energy range that have the same bandgaps as each comprise (Al)Ga x In 1−x P, at least one of the lattice-matched subcells in the high energy range comprises (Al)Ga x In 1−x As y P 1−y , the at least one lattice-matched subcell in the medium energy range comprises (In)GaAs, at said least two lattice-mismatched subcells in the low energy range comprise Ga x In 1−x As.
36. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 35 , wherein said at least two lattice-matched subcells in the high energy range that have the same bandgaps and comprise (Al)Ga x In 1−x P have bandgaps of about 1.9 eV, said at least one of the lattice-matched subcells in the high energy range that comprises (Al)Ga x In 1−x As y P 1−y has a bandgap of about 1.7 eV, the at least one lattice-matched subcell in the medium energy range that comprises (In)GaAs has a bandgap of about 1.4 eV, at least one of the lattice-mismatched subcells that comprises Ga x In 1−x As has a bandgap of about 1.1 eV, and at least one of the lattice-mismatched subcells that comprises Ga x In 1−x As has a bandgap of about 0.9 eV.
37. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 28 , wherein said at least two lattice-matched subcells in the high energy range that have the same bandgaps as each comprise (Al)Ga x In 1−x P, at least one of the lattice-matched subcells in the high energy range comprises Al z Ga 1−z As, the at least one lattice-matched subcell in the medium energy range comprises (In)GaAs, and said at least two lattice-mismatched subcells comprise Ga x In 1−x As.
38. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 31 , wherein said at least two lattice-matched subcells in the high energy range that have the same bandgaps and comprise (Al)Ga x In 1−x P have bandgaps of about 1.9 eV, said at least one of the lattice-matched subcells in the high energy range that comprises Al z Ga 1−z As has a bandgap of about 1.7 eV, the at least one lattice-matched subcell in the medium energy range that comprises (In)GaAs has a bandgap of about 1.4 eV, at least one of the lattice-mismatched subcell that comprises Ga x In 1−x As has a bandgap of about 1.1 eV, and at least one the lattice-mismatched subcell that comprises Ga x In 1−x As has a bandgap of about 0.9 eV.
39. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 1 , wherein the at least one lattice-matched subcell has a bandgap of about 1.7 eV and the at least one lattice-mismatched subcell has a bandgap of about 1.1 eV.
40. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 1 , wherein the at least one lattice-matched subcell has a bandgap of about 1.8 eV and the at least one lattice-mismatched subcell has a bandgap of about 1.2 eV.
41. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 2 , wherein the at least one lattice-matched subcell in the high energy range has a bandgap of about 1.9 eV, the at least one lattice-matched subcell in the medium energy range has a bandgap of about 1.4 eV, and the at least one lattice-mismatched subcell has a bandgap of about 1.0 eV.
42. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 22 , wherein said at least one of the lattice-matched subcells in the high energy range has a bandgap of about 1.9 eV, said at least another one of the lattice-matched subcells in the high energy range has a bandgap of about 1.7 eV, said at least one lattice-matched subcell in the medium energy range has a bandgap of about 1.4 eV, and said at least one lattice-mismatched subcell has a bandgap of about 1.1 eV.
43. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 28 , wherein said at least two lattice-matched subcells in the high energy range that have the same bandgaps have bandgaps of about 1.9 eV and at least one of the lattice-matched subcells in the high energy range has a bandgap of about 1.7 eV, the at least one lattice-matched subcell in the medium energy range has a bandgap of about 1.4 eV, and the at least one lattice-mismatched subcell has a bandgap of about 1.1 eV.
44. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 34 , wherein said at least two lattice-matched subcells in the high energy range that have the same bandgaps have bandgaps of about 1.9 eV and at least one of the lattice-matched subcells in the high energy range has a bandgap of about 1.7 eV, the at least one lattice-matched subcell in the medium energy range has a bandgap of about 1.4 eV, at least one of the lattice-mismatched subcells has a bandgap of about 1.1 eV, and at least one of the lattice-mismatched subcells has a bandgap of about 0.9 eV.
45. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 3 , including a tunnel junction positioned between said subcell with the bandgap at least as high as the medium range and said subcell with the bandgap in the low energy range, said tunnel junction having a bandgap that is at least as high as said subcell that has the bandgap at least as high as the medium range.
46. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 45 , wherein the tunnel junction is positioned between the subcell with the bandgap at least as high as the medium range and the graded layer.
47. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 1 , wherein the bandgap of said at least one subcell grown lattice-matched in relation to the substrate is at least as high as 1.2 eV.
48. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 47 , wherein the bandgap of said at least one subcell grown lattice-mismatched to the substrate is in a range of 0.8 to 2.2 eV.
49. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 3 , wherein the substrate is selected from a group consisting of GaAs, Ge, SiGe, and GaAs bonded onto Si.
50. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 49 , wherein the substrate has a first lattice constant and said at least one lattice mismatched subcell has a second lattice constant, and wherein the graded layer is compositionally graded to start with a lattice constant that matches the first lattice constant and to end with a lattice constant that matches the second lattice constant.
51. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 50 , wherein the at least one lattice-matched subcell comprises Ga x In 1−x As y P 1−y and the at least one lattice-mismatched subcell comprises Ga x In 1−x As.
52. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 51 , wherein the at least one lattice-matched subcell has a bandgap of about 1.7 eV and the at least one lattice-mismatched subcell has a bandgap of about 1.1.
53. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 50 , wherein the at least one lattice-matched subcell comprises Ga x In 1−x P and the at least one lattice-mismatched subcell comprises Ga x In 1−x As.
54. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 53 , wherein the at least one lattice-matched subcell has a bandgap of about 1.8 eV and the at least one lattice-mismatched subcell has a bandgap of about 1.2 eV.
55. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 3 , wherein the substrate has a first lattice constant and said at least one lattice mismatched subcell has a second lattice constant, and wherein the graded layer is compositionally graded to start with a lattice constant that matches the first lattice constant and to end with a lattice constant that matches the second lattice constant.
56. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 55 , wherein the at least one lattice-matched subcell comprises Ga x In 1−x As y P 1−y and the at least one lattice-mismatched subcell comprises Ga x In 1−x As.
57. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 56 , wherein the at least one lattice-matched subcell has a bandgap of about 1.7 eV and the at least one lattice-mismatched subcell has a bandgap of about 1.1.
58. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 57 , wherein the at least one lattice-matched subcell comprises Ga x In 1−x P and the at least one lattice-mismatched subcell comprises Ga x In 1−x As.
59. The monolithic, multi-bandgap, tandem solar photovoltaic converter of claim 58 , wherein the at least one lattice-matched subcell has a bandgap of about 1.8 eV and the at least one lattice-mismatched subcell has a bandgap of about 1.2 eV.