IP Library › Granted Patent US 7,151,033
Granted Patent B2
US 7,151,033 · App. 11/029,343 · Granted Dec 19, 2006

Method for manufacturing a semiconductor device having a low junction leakage current

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Quick Facts
Patent No.
US 7,151,033
App. No.
11/029,343
Granted
Dec 19, 2006
Kind
B2
Abstract

A method for manufacturing a DRAM device includes a hydrogenating step conducted to source/drain diffused regions in a hydrogen ambient at a substrate temperature not lower than 350 degrees C., and a dehydrogenating step in an inactive gas ambient at a substrate temperature of lower than 350 degrees C., before a packaging step. If a defective cell having a lower refreshing time is found in the test before the packaging step, the defective cell is replaced by a redundant cell. The resultant DRAM has a lower degradation in the refreshing characteristic after the packaging step.

Claims (16)

1. A method for manufacturing a semiconductor device comprising:

forming source/drain diffused regions on a surface of a semiconductor substrate;

hydrogenating the surface of said semiconductor substrate including said source/drain diffused regions; and

dehydrogenating said hydrogenated surface of said semiconductor substrate;

wherein said hydrogenating is conducted in a hydrogen ambient at a substrate temperature of at least 350 degrees C.; and

wherein said hydrogen ambient has a deuterium content lower than a deuterium content in hydrogen gas existing in the natural world.

2. The method according to claim 1 , wherein said deuterium content of said hydrogen ambient is not higher than 70 ppm.

3. The method according to claim 1 , wherein said dehydrogenating is conducted in an inactive gas ambient at a substrate temperature of lower than 350 degrees C.

4. The method according to claim 3 , wherein said dehydrogenating is conducted at a substrate temperature of least 250 degrees C.

5. The method according to claim 4 , wherein said inactive gas ambient includes nitrogen or argon.

6. The method according to claim 1 , wherein said semiconductor device is a DRAM device.

7. A method for manufacturing a semiconductor device comprising:

forming source/drain diffused regions on a surface of a semiconductor substrate; and

hydrogenating the surface of said semiconductor substrate including said source/drain diffused regions in a hydrogen ambient including deuterium at a content lower than a deuterium content of hydrogen gas existing in the natural world.

8. The method according to claim 7 , wherein said hydrogenating is conducted at a substrate temperature of least 350 degrees C.

9. The method according to claim 7 , wherein the deuterium content of said hydrogen ambient is not higher than 70 ppm.