Thin-film transistor with semiconductor layer and off-leak current characteristics
View Patent ↗Recognizing the phenomenon that the film thickness of a semiconductor layer causes shift in the OFF-leak current characteristic that corresponds to back-gate voltage of a thin-film transistor, the average film thickness of a semiconductor layer is prescribed such that the shift of the OFF-leak current characteristic is reduced. Alternatively, the film thickness distribution (the ratio of the occurrence of each region having different film thickness) in the direction of the channel width of the semiconductor layer is prescribed.
1. A thin-film transistor, comprising:
a substrate;
a semiconductor layer in which a source, a drain, and a channel are formed; and
a back-gate that is formed between said substrate and said semiconductor layer having interposed insulating layers and to which a prescribed voltage is applied;
wherein, when:
t is a film thickness of said semiconductor layer,
f(t) is the ratio of occurrence of regions that is the ratio of channel width W(t) of regions having film thickness t to the channel width of the entire region Wtotal in said semiconductor layer,
Vb is the voltage that is applied to said back-gate,
I D (Vb, t) is a drain current that flows under conditions in which the film thickness of said semiconductor layer is t and the voltage that is applied to said back-gate is Vb, and
Icrit is an OFF-leak current limit, which is the drain current that flows when said thin-film transistor is turned OFF,
said ratio of occurrence f(t) of said semiconductor layer satisfies a relation:
f ( t )< I crit / W total .I D ( V b , t ))
wherein Icrit is 5.00E-12 A.
2. The thin-film transistor according to claim 1 ,
wherein said semiconductor layer has the film thickness distribution in the direction of channel width, and an average value of the film thickness of said semiconductor layer is 30 nm or less, and
wherein edges of said semiconductor layer are tapered.
3. The thin-film transistor according to claim 2 , wherein the average value of the film thickness of said semiconductor layer is 10 nm or less.
4. The thin-film transistor according to claim 1 , wherein said semiconductor layer includes lightly-doped drain (LDD) regions, in which impurity concentrations differ from that of said source and said drain, on said channel side of said source and on said channel side of said drain.
5. The thin-film transistor according to claim 2 , wherein said semiconductor layer includes lightly-doped drain (LDD) regions, in which impurity concentrations differ from that of said source and said drain, on said channel side of said source and on said channel side of said drain.
6. A liquid crystal display device that includes thin-film transistors according to claim 4 .
7. A liquid crystal display device that includes thin-film transistors according to claim 5 .
8. The thin-film transistor according to claim 2 , wherein the average value of the film thickness of said semiconductor layer is 5 nm or less.
9. The thin-film transistor according to claim 1 , wherein the average value of the film thickness of said semiconductor layer is 10 nm or less.
10. The thin-film transistor according to claim 1 , wherein said ratio of the occurrence of regions, in which the film thickness of said semiconductor layer is ½ of the basic film thickness of the overall channel width, is set to 0.25 or less, and said ratio of the occurrence of regions, in which the film thickness of said semiconductor layer is ⅙ or less of the basic film thickness of the overall channel width, is set to 0.0025 or less.