Electrooptical device region and manufacturing method thereof, electrooptical device and electronic equipment
View Patent ↗A region of an electrooptical device includes a substrate, an active matrix switching element formed on the substrate and a pixel electrode formed on the substrate and having a first pixel electrode coupled to the switching element AM and a second pixel electrode covering a second switching element coupled to a third electrode.
1. A device comprising:
a substrate;
a first switching element formed on the substrate;
a first pixel electrode formed on the substrate coupled to the first switching element;
a second switching element formed on the substrate;
a second pixel electrode formed over a portion of the second switching element;
a third pixel electrode formed on the substrate and coupled to the first and second switching elements; and
a fourth pixel electrode formed over the first switching element and coupled to the third pixel electrode.
2. The device according to claim 1 , further comprising:
a capacitor formed between the second pixel electrode and the second switching element.
3. The device according to claim 1 , further comprising:
a first capacitor formed between the fourth pixel electrode and the first switching element.
4. The device according to claim 3 , further comprising:
a second capacitor formed between the second pixel electrode and the second switching element.
5. The device according to claim 1 , wherein the first and second switching elements are organic thin film transistors.
6. The device according to claim 1 , further comprising:
a counter substrate opposed to the substrate; and
an electrooptical layer provided between the substrate and the counter substrate.
7. A method of manufacturing a portion of an electrooptical device on a substrate comprising the steps of:
forming a first switching element on the substrate;
forming a first pixel electrode on the substrate coupled to the first switching element;
forming a second switching element on the substrate;
forming a second pixel electrode over a portion of the second switching element;
forming a third pixel electrode on the substrate and coupled to the first and second switching elements; and
forming a fourth pixel electrode over the first switching element and coupled to the third pixel electrode.
8. The method of claim 7 , wherein the second pixel electrode is formed by a wet process.
9. A region of an electrooptical device, comprising:
a substrate;
a first switching element formed on the substrate;
a first pixel electrode formed on the substrate coupled to the switching element;
a second switching element formed on the substrate;
a second pixel electrode covering the second switching element;
a third pixel electrode coupled to the second switching element; and
a fourth pixel electrode formed over the first switching element and coupled to the third pixel electrode.
10. The region of an electrooptical device according to claim 9 , further comprising:
a capacitor formed between the second pixel electrode and the second switching element.
11. The region of the electrooptical device according to claim 9 , wherein the first and second switching elements are organic thin film transistor.
12. An electrooptical device including the region of the electrooptical device according to claim 9 further comprising:
a counter substrate opposed to the portion of the electrooptical device; and
an electrooptical layer provided between the portion of the electrooptical device and the counter substrate.
13. Electronic equipment comprising the device according to claim 12 .
14. An electrooptical device comprising:
a substrate;
a first transistor formed on the substrate;
a second transistor formed on the substrate, the first transistor and the second transistor being located side by side, source electrodes of the first and second transistors being connected to a common data line;
a first pixel electrode formed as a drain electrode of the first transistor;
a second pixel electrode formed over the first transistor and connected to a drain electrode of the second transistor; and
a capacitor formed between a gate of the first transistor and the second pixel electrode.
15. The electrooptical device according to claim 14 , wherein the first and second transistors are organic thin film transistors.
16. The electrooptical device according to claim 14 , wherein a source electrode of the first transistor has a comb teeth shape, and a part of the drain electrode has a comb teeth shape.
17. The electrooptical device according to claim 14 , further comprising:
a counter substrate opposed to the substrate; and
an electrooptical layer provided between the substrate and the counter substrate.
18. An electrophoretic display comprising the electrooptical device according to claim 17 .