Method for fabricating semiconductor device
View Patent ↗In a method for fabricating a semiconductor device in which a semiconductor memory element having an ONO film and a CMOS part are formed on a single semiconductor substrate, a CMOS gate-oxidation step is performed several times. Thereafter, a bit line diffusion layer and a bit line oxide film are formed in the semiconductor memory element.
1. A method for fabricating a semiconductor device in which a semiconductor memory element having an ONO (silicon oxide layer/silicon nitride layer/silicon oxide layer) film as a gate insulating film and a CMOS part are formed on a semiconductor substrate, said method comprising:
the step of forming an ONO film on the top surface of the semiconductor substrate;
the step X of forming bit lines for the semiconductor memory element by introducing first impurities into parts of the semiconductor substrate;
the step Y of forming bit line oxide films on the bit lines;
the step of implanting second impurities into a region of the semiconductor substrate in which a CMOS part is to be formed; and
the step of forming a thermal oxide film on the region of the semiconductor substrate into which the second impurities are implanted,
wherein the bit line oxide films are formed simultaneously with the formation of the thermal oxide film.
2. The method for fabricating a semiconductor device of claim 1 , wherein the step of forming a thermal oxide film is carried out a plurality of times, and simultaneously with the formation of the bit line oxide films, the step of forming a thermal oxide film is carried out at any one of said plurality of times.
3. The method for fabricating a semiconductor device of claim 1 , wherein
the formation of bit line oxide films and the formation of a thermal oxide film are implemented by an oxidation method using an internal combustion system.
4. The method for fabricating a semiconductor device of claim 1 , wherein the formation of bit line oxide films and the formation of a thermal oxide film are implemented by ISSG oxidation.
5. The method for fabricating a semiconductor device of claim 1 , said method further comprising the step of reducing the thickness of said at least thermal oxide film by wet etching after the step Y.
6. The method for fabricating a semiconductor device of claim 1 , said method further comprising the step of annealing after the steps X and Y.
7. The method for fabricating a semiconductor device of claim 1 , wherein in the step of forming said thermal oxide film, said thermal oxide film is formed to be a gate insulating film.
8. A method for fabricating a semiconductor device in which a semiconductor memory element having an ONO (silicon oxide layer/silicon nitride layer/silicon oxide layer) film as a gate insulating film and a CMOS part are formed on a semiconductor substrate, said method comprising:
the step of forming an ONO film on the top surface of the semiconductor substrate;
the step X of forming bit lines for the semiconductor memory element by introducing first impurities into parts of the semiconductor substrate;
the step Y of forming bit line oxide films on the bit lines;
the step of implanting second impurities into a region of the semiconductor substrate in which a CMOS part is to be formed;
the step of forming a thermal oxide film on the region of the semiconductor substrate into which the second impurities have been implanted, and
the step of reducing the thickness of at least said thermal oxide film by wet etching after the step Y,
wherein the steps X and Y are carried out after the step of forming said thermal oxide film.
9. A method for fabricating a semiconductor device in which a semiconductor memory element having an ONO (silicon oxide layer/silicon nitride layer/silicon oxide layer) film as a gate insulating film and a CMOS part are formed on a semiconductor substrate, said method comprising:
the step of forming an ONO film on the top surface of the semiconductor substrate;
the step X of forming bit lines for the semiconductor memory element by introducing first impurities into parts of the semiconductor substrate;
the step Y of forming bit line oxide films on the bit lines;
the step of implanting second impurities into a region of the semiconductor substrate in which a CMOS part is to be formed;
the step of heat treatment after the step of implanting second impurities;
the step of forming a thermal oxide film on the region of the semiconductor substrate into which the second impurities have been implanted after the step of heat treatment, and
the step of reducing the thickness of at least said thermal oxide film by wet etching after the step Y,
wherein the steps X and Y are carried out after the step of heat treatment.
10. The method for fabricating a semiconductor device of claim 9 , said method further comprising the step of annealing after the steps X and Y.