Microwave transmission line having dielectric film layers providing negative space charge effects
View Patent ↗A microwave transmission line includes a substrate of high-resistivity silicon, a first dielectric film and a second dielectric film successively formed on the principal surface of the substrate and having different compositions, and a conductor film formed with at least the first dielectric film interposed between the conductor film and the substrate. One of the first and second dielectric films has positive space charges and the other has negative space charges. A signal electric field propagates through the substrate, the first dielectric film and the second dielectric film.
1. A microwave transmission line comprising:
a substrate of high-resistivity silicon;
a first dielectric film made of silicon oxide having positive space charges and a second dielectric film made of aluminum oxide or aluminum nitride having negative space charges, both successively formed on the principle surface of the substrate on the principal surface of the substrate and; and
a conductor film formed with at least the first dielectric film interposed between the conductor film and the substrate,
wherein
a signal electric field propagates through the substrate, the first dielectric film and the second dielectric film.
2. The microwave transmission line of claim 1 further comprising
grounding conductor films formed to both sides of the conductor film on the principal surface of the substrate, respectively, said grounding conductor films being formed apart from the conductor film.
3. The microwave transmission line of claim 2 , wherein
the second dielectric film is formed only in a region having a high signal electric field intensity.
4. The microwave transmission line of claim 1 , wherein
the conductivity type of the substrate is a p type, and the substrate has a majority carrier density of 1×10 13 cm-3 or less.
5. The microwave transmission line of claim 1 , wherein
the first and second dielectric films are stacked alternately one after the other to neutralize potentials in the vicinity of the principal surface of the substrate.
6. The microwave transmission line of claim 1 , wherein
the second dielectric film is formed only in a region having a high signal electric field intensity.
7. The microwave transmission line of claim 1 further comprising
a grounding conductor film formed on the opposite surface of the substrate to the principal surface thereof.
8. The microwave transmission line of claim 7 further comprising
a third dielectric film made of silicon oxide having positive space charges and a fourth dielectric film made of aluminum oxide or aluminum nitride having negative space charges, both successively formed between the substrate and the grounding conductor film.
9. The microwave transmission line of claim 1 , wherein
the conductor film is connected to at least one of a transistor, a diode, a resistor element, a capacitor element, and an inductor element all formed on the principal surface of the substrate.
10. The microwave transmission line of claim 1 , wherein
the conductor film is composed of a first conductor film and a second conductor film formed apart from and parallel to each other on the principal surface of the substrate.
11. The microwave transmission line of claim 10 , wherein
the second dielectric film is formed only in a region having a high signal electric field intensity.