Method for forming interlayer insulation film
View Patent ↗It is an object of the present invention to provide a method for forming an interlayer insulation film suppressing the occurrence of voids in the interlayer insulation film. A method for forming an interlayer insulation film of the present invention, comprising the steps of: (1) forming an etching stopper film of a silicon nitride film on an entire surface including a step part on a semiconductor substrate having the step part with an aspect ratio of ≧3; (2) forming an interlayer insulation film of an impurity-doped silicate film on the silicon nitride film; and (3) performing reflow of the interlayer insulation film by a heat treatment, wherein the formation of the silicon nitride film is controlled such that the N—H bond density of the silicon nitride film is 1.0×10 22 pieces/cm 3 or less. According to the method for forming the interlayer insulation film of the present invention, the occurrence of the voids can be suppressed in the interlayer insulation film even if the aspect ratio of the step part formed on the semiconductor substrate is 3 or more. Also, the damage applied to the semiconductor device by reflow can be reduced.
1. A method for forming an interlayer insulation film, comprising:
forming an etching stopper film of a silicon nitride film on an entire surface including a step part on a semiconductor substrate, the step part having an aspect ratio of ≧3 and being formed between gates on the semiconductor substrate;
forming an interlayer insulation film of an impurity-doped silicate film on the silicon nitride film; and
performing reflow of the interlayer insulation film by a heat treatment, wherein the formation of the silicon nitride film is controlled such that the N—H bond density of the silicon nitride film is 1.0×10 22 pieces/cm 3 or less,
wherein the silicon nitride film is formed by a plasma CVD method.
2. The method according to claim 1 , wherein the heat treatment is conducted in a furnace at a temperature of 700° C. to 770° C. under an N 2 atmosphere.