Pattern forming method and manufacturing method of semiconductor device

1. A pattern forming method comprising:

forming a spin on dielectric film above a substrate;

washing an entire top surface of the spin on dielectric film by using a washing liquid, the washing liquid being supplied to a center of the substrate from a nozzle;

drying the surface of the spin on dielectric film after the washing;

forming a photosensitive film on the surface of the spin on dielectric film;

emitting energy rays to the photosensitive film in order to form a latent image on the photosensitive film;

developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image; and

processing the spin on dielectric film with the photosensitive film pattern serving as a mask,

wherein a planarization of the entire top surface of the substrate is unchanged before and after the washing.

2. A pattern forming method according to claim 1 , wherein the washing liquid is a solution including any one of ultra-pure water, ozone water, and hydrogen peroxide water.

3. A pattern forming method according to claim 1 , further comprising a step of exposing the surface of the spin on dielectric film to a hydrophobic processing agent after drying the surface of the spin on dielectric film.

4. A pattern forming method according to claim 3 , wherein the hydrophobic processing agent is chlorosilanes, silazanes, or alkoxysilanes.

5. A pattern forming method according to claim 1 , further comprising heating the spin on dielectric film in order to remove molecules of a washing liquid adsorbed to the surface of the spin on dielectric film after drying the surface of the spin on dielectric film.

6. The method according to claim 1 , further comprising performing a thermal process to the spin on dielectric film after washing.

7. A pattern forming method comprising:

preparing a first substrate;

forming a photosensitive film above the first substrate;

washing an entire top surface of the photosensitive film by using a first washing liquid before emitting energy rays;

drying the surface of the photosensitive film;

emitting energy rays to the photosensitive film by using an immersion type exposure in order to form a latent image on the photosensitive film;

developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image; and

processing the first substrate with the photosensitive film pattern serving as a mask,

wherein a planarization of the entire top surface of the substrate is unchanged before and after the washing.

8. A pattern forming method according to claim 7 , wherein the first washing liquid is a solution including any one of ultra-pure water, ozone water, and hydrogen peroxide water.

9. A pattern forming method according to claim 7 , wherein the preparing a first substrate includes:

forming a spin on dielectric film on a second substrate;

washing the spin on dielectric film by using a second washing liquid; and

drying a surface of the spin on dielectric film after washing a coating type insulation film.

10. A pattern forming method according to claim 9 , wherein the second washing liquid is a solution including any one of ultra-pure water, ozone water, and hydrogen peroxide water.

11. A pattern forming method according to claim 9 , further comprising exposing the surface of the coating type insulation film to a hydrophobic processing agent after drying the surface of the spin on dielectric film.

12. A pattern forming method according to claim 11 , wherein the hydrophobic processing agent is chlorosilanes, silazanes, or alkoxysilanes.

13. A pattern forming method according to claim 9 , wherein a top surface of the second substrate is an anti-reflection film.

14. A pattern forming method according to claim 9 , wherein the preparing of the first substrate is the preparing of the spin on dielectric film and the preparing of the second substrate.

15. A pattern forming method according to claim 9 , wherein drying the surface of the spin on dielectric film is carried out by using a spin drying technique.

16. A pattern forming method according to claim 9 , further comprising heating the spin on dielectric film in order to remove molecules of a washing liquid adsorbed to the surface of the spin on dielectric film after drying the surface of the spin on dielectric film.

17. The method according to claim 7 , further comprising performing a thermal process to the spin on dielectric film after washing.

18. The method according to claim 7 , wherein the photosensitive film has no protection film formed thereon.

19. The method according to claim 7 , wherein the photosensitive film is a chemically amplified resist film which contains an optical acid generating material.

20. A semiconductor device manufacturing method comprising:

preparing a substrate for forming a semiconductor element;

forming a spin on dielectric film above the substrate;

washing an entire top surface of the spin on dielectric film by using a washing liquid, the washing liquid being supplied to a center of the substrate from a nozzle which is fixed and without moving to a peripheral region of the substrate;

drying the surface of the spin on dielectric film after the washing;

forming a photosensitive film on the surface of the spin on dielectric film;

emitting energy rays to the photosensitive film in order to form a latent image on the photosensitive film;

developing the photosensitive film in order to form a photosensitive film pattern based on the latent image; and

processing the spin on dielectric film with the photosensitive film pattern serving as a mask,

wherein a planarization of the entire top surface of the substrate is unchanged before and after the washing.

21. A semiconductor device manufacturing method comprising:

forming a photosensitive film above a substrate;

washing an entire top surface of the photosensitive film by using a washing liquid before emitting energy rays;

emitting energy rays to the photosensitive film in order to form a latent image on the photosensitive film;

developing the photosensitive film in order to form a photosensitive film pattern based on the latent image; and

processing the substrate with the photosensitive film pattern serving as a mask, wherein a planarization of the entire top surface of the substrate is unchanged before and after the washing.

22. The method according to claim 21 , wherein the photosensitive film has no protection film formed thereon.

23. A pattern forming method comprising:

forming a spin on dielectric film on a substrate;

washing an entire top surface of the spin on dielectric film by using a washing liquid, the washing liquid being supplied to a center of the substrate from a nozzle which is not moved to peripheral region of the substrate;

drying a surface of the spin on dielectric film after the washing;

forming a photosensitive film on the dried spin on dielectric film;

emitting energy rays to a predetermined position of the photosensitive film in order to form a latent image on the photosensitive film;

developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image; and

processing the spin on dielectric film with the photosensitive film pattern serving as a mask.

24. The method according to claim 23 , wherein the nozzle is fixed.

25. A pattern forming method comprising:

preparing a substrate;

forming a photosensitive film on the substrate;

washing an entire top surface of the photosensitive film by using a washing liquid before emitting energy rays, the washing liquid being supplied from a nozzle which is not moved to peripheral region of the substrate;

drying a surface of the photosensitive film;

emitting energy rays to a predetermined position of the photosensitive film by using an immersion type exposure in order to form a latent image on the photosensitive film;

developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image; and

processing the substrate with the photosensitive film pattern serving as a mask.

26. The method according to claim 25 , wherein the nozzle is fixed.

27. The method according to claim 25 , wherein the photosensitive film is a chemically amplified resist film which contains an optical acid generating material.

28. The method according to claim 26 , wherein the photosensitive film is a chemically amplified resist film which contains an optical acid generating material.