Nonvolatile semiconductor memory device
View Patent ↗A nonvolatile memory element is formed by layering a lower electrode, a variable resistor and an upper electrode in sequence. The variable resistor is formed in which crystallinity and amorphism are mixed. Thus, the nonvolatile memory element is formed. More preferably, the variable resistor is a praseodymium-calcium-manganese oxide represented by a general formula, Pr 1-x Ca x MnO 3 , that has been formed at a film forming temperature from 350° C. to 500° C. Alternatively, the variable resistor is formed as a film at a film forming temperature that allows the variable resistor to become of an amorphous state or a state where crystallinity and amorphism are mixed and, then, is subjected to an annealing process at a temperature higher than the film forming temperature, in a temperature range where the variable resistor can maintain the state where crystallinity and amorphism are mixed.
1. A nonvolatile semiconductor memory device comprising:
a variable resistance element including a variable resistor of a perovskite-type metal oxide film, wherein
crystal portions and amorphous portions of the variable resistor are mixed and the crystal portions are interspersed in the amorphous portions.
2. The nonvolatile semiconductor memory device according to claim 1 , wherein
the variable resistance element includes a lower electrode, the variable resistor and an upper electrode, which are layered in sequence.
3. The nonvolatile semiconductor memory device according to claim 1 , wherein
the variable resistor is a praseodymium-calcium-manganese oxide represented by a general formula, Pr 1-x Ca x MnO 3 .
4. The nonvolatile semiconductor memory device according to claim 1 , wherein
the variable resistor is formed in a layer above a lowest metal interconnect layer of the device.
5. The nonvolatile semiconductor memory device according to claim 1 , wherein
the variable resistor is of a praseodymium-calcium-manganese oxide represented by a general formula, Pr 1-x Ca x MnO 3 .