Smart lock-in circuit for phase-locked loops
View Patent ↗The smart lock-in circuits basically include a sensor, two stacked PMOS transistors, two stacked NMOS transistors, and a feedback line. If the sensing voltage does not reach the expected voltage compared to the midpoint voltage of the sensor, the output voltage of the sensor turns on the corresponding transistor, which provides a current to its output until the voltage at feedback reaches the midpoint voltage. The time to reach the midpoint voltage at a filter is simply equal to the charge stored at the filter divided by the current, which can be scaled by a device aspect ratio of the transistor. Consequently, all smart lock-in circuits provide an initial loop condition closer to the expected loop condition according to schedule.
1. A smart lock-in circuit for enabling any phase-locked loop including at least a filter to become locked according to schedule, comprising:
a feedback line connected to an output and input of the smart lock-in circuit and also coupled to an output of a filter;
a sensor for sensing a voltage at the filter output, comparing with a midpoint voltage decided by device aspect ratios of the sensor, and providing its response;
two stacked PMOS transistors connected between power supply and the output; and
two stacked NMOS transistors connected between the output and ground.
2. The circuit as recited in claim 1 wherein the sensor is a lower-voltage sensor whose device aspect ratios determine a lower midpoint voltage.
3. The circuit as recited in claim 2 wherein the lower-voltage sensor's output is coupled to the gate terminal of an upper PMOS transistor generating a current having a lock-in time parameter until a filter output voltage reaches the lower midpoint voltage of the lower-voltage sensor.
4. The circuit as recited in claim 1 wherein the sensor is a higher-voltage sensor whose device aspect ratios determine a higher midpoint voltage.
5. The circuit as recited in claim 4 wherein the higher-voltage sensor's output is coupled to the gate terminal of a lower NMOS transistor generating a current having a lock-in time parameter until a filter output voltage reaches the higher midpoint voltage of the higher-voltage sensor.
6. The circuit as recited in claim 1 wherein the sensor is both a lower-voltage sensor and a higher-voltage sensor.
7. The circuit as recited in claim 6 wherein the lower-voltage senso's output is coupled to the gate terminal of the upper PMOS transistor and the higher-voltage sensor's output is coupled to the gate terminal of the lower NMOS transistor.
8. The circuit as recited in claim 1 wherein the sensor is an even number of inverters.
9. The circuit as recited in claim 1 wherein the sensor functions as comparator.
10. The circuit as recited in claim 1 wherein the sensor is an even number of NAND gates since the two-input CMOS NAND gate can be used as an enabling inverter with one input serving as an active high enable input and the other used as the logical input.
11. The circuit as recited in claim 1 wherein the sensor is an even number of NOR gates since the two-input CMOS NOR gate can be used as an enabling inverter with one input serving as an active low enable input and the other used as the logical input.
12. The circuit as recited in claim 1 further comprising a power-down NMOS transistor so that no current flows into the circuit during power-down mode.
13. The circuit as recited in claim 12 wherein the output of the smart lock-in circuit is coupled to the output of the filter connected between the output and ground.
14. The circuit as recited in claim 12 wherein the output of the smart lock-in circuit is at ground when the power-down NMOS transistor input is at the power supply.
15. The circuit as recited in claim 1 further comprising a power-down PMOS transistor and a power-down inverter so that no current flows into the circuit during power-down mode.
16. The circuit as recited in claim 15 wherein the output of the smart lock-in circuit is coupled to the output of the filter connected between the output and power supply.
17. The circuit as recited in claim 15 wherein the output of the smart lock-in circuit is at power supply when the power-down PMOS transistor input is at ground.
18. The circuit as recited in claim 15 wherein a power-down inverter is an odd number of inverters.
19. The circuit as recited in claim 1 wherein the smart lock-in circuit is applied to all phase-locked loops including at least a filter without regard to architectures, topologies, and schematics.