Semiconductor device, module for optical devices, and manufacturing method of semiconductor device
View Patent ↗An image pickup element and a micro-lens part are formed on the front surface of a semiconductor substrate; through electrodes passing through the semiconductor substrate are formed; protruding parts protruding from the front surface toward a glass lid are formed in a thickness greater than the thickness of the micro-lens part on the through electrodes; and the protruding parts are interposed between the semiconductor substrate and the glass lid.
1. A semiconductor device comprising:
a semiconductor substrate with a semiconductor element formed in one surface thereof;
a through electrode formed in the semiconductor substrate;
a protruding part formed on said one surface of the semiconductor substrate so as to protrude from said one surface;
a lid member supported by the protruding part and attached to the semiconductor substrate to cover the semiconductor element; and
wherein the protruding part is integrally formed with the through electrode.
2. The semiconductor device according to claim 1 , further comprising a micro-lens mounted on the one surface, wherein the protruding part has a thickness greater than a thickness of the micro-lens.
3. The semiconductor device according to claim 1 , wherein the protruding part is formed on the one surface.
4. The semiconductor device according to claim 1 , wherein the through electrode and the protruding part are formed by using the same conductive material.
5. The semiconductor device according to claim 1 , wherein the protruding part is made of metal.
6. The semiconductor device according to claim 1 , wherein the lid member has a light transmitting property, and the semiconductor element is a light receiving element or an image pickup element.
7. The semiconductor device according to claim 2 , wherein the protruding part is formed on the one surface.
8. The semiconductor device according to claim 2 , wherein the through electrode and the protruding part are formed by using the same conductive material.
9. The semiconductor device according to claim 2 , wherein the protruding part is made of metal.
10. The semiconductor device according to claim 2 , wherein the lid member has a light transmitting property, and the semiconductor element is a light receiving element or an image pickup element.
11. A module for optical devices, comprising: a semiconductor device as set forth in claim 1 ; and
an optical path defining device for defining an optical path to the semiconductor device.
12. A manufacturing method of a semiconductor device, the method comprising:
forming a semiconductor element in one surface of a semiconductor substrate;
forming a through electrode in the semiconductor substrate;
forming a protruding part protruding from the one surface on the semiconductor substrate; and
supporting a lid member by the formed protruding part and attaching the lid member to the semiconductor substrate so as to cover the semiconductor element, and wherein the protruding part is integrally formed with the through electrode after or during forming the through electrode.
13. The manufacturing method of a semiconductor device according to claim 12 , further comprising the step of mounting a micro-lens on the one surface,
wherein when forming the protruding part, the protruding part is formed in a thickness greater than a thickness of the micro-lens.
14. The manufacturing method of a semiconductor device according to claim 12 , wherein the protruding part is formed by plating the semiconductor substrate.
15. The manufacturing method of a semiconductor device according to claim 12 , wherein the protruding part is formed by printing a metallic paste on the semiconductor substrate and hardening the printed metallic paste.
16. The semiconductor device of claim 1 , further comprising a micro-lens located between at least the lid member and the semiconductor substrate, and wherein the protruding part extends to an elevation above the microlens so that the protruding part and the through electrode are formed of the same conductive material.
17. The method of claim 12 , further comprising providing a micro-lens located between at least the lid member and the semiconductor substrate, and wherein the protruding part extends to an elevation above the microlens so that the protruding part and the through electrode are formed of the same conductive material.
18. The semiconductor device of claim 1 , wherein the lid member directly contacts the protruding part.
19. The method of claim 12 , wherein the lid member directly contacts the protruding part.