Resistive memory for low-voltage applications
View Patent ↗Memory cells having two electrodes and a layer arranged in between and including an active material which contains hexakisbenzylthiobenzene, dichlorodicyano-p-benzoquinone and optionally a polymer are provided. Furthermore, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.
1. A memory cell comprising:
a first electrode;
a second electrode; and
an active layer which is arranged between the first and the second electrode, the active layer comprising hexakisbenzylthiobenzene and dichlorodicyano-p-benzoquinone.
2. The memory cell of claim 1 , comprising the ratio of the hexakisbenzylthiobenzene to dichlorodicyano-p-benzoquinone is from 1:4 to 4:1.
3. The memory cell of claim 1 , the active layer further comprising a polymer.
4. The memory cell of claim 3 , comprising the amount by weight of the polymer, based on the total amount of the active material, is in the range between 0 and 70% by weight.
5. The memory cell of claim 3 , comprising wherein the polymer is a film forming carrier material.
6. The memory cell of claim 3 , comprising wherein the polymer is selected from the group consisting of polyether, polyacrylate, polyether sulphone, polyether sulphide, polyether ketone, polyquinoline, polyquinoxaline, polybenzoxazole, polybenzimida-zole or polyimide.
7. The memory cell of claim 1 , comprising wherein the memory cell is applied to a substrate selected from the group consisting of silicon, germanium, gallium arsenide, gallium nitride, any desired compound of silicon, germanium or gallium, a polymer, ceramic, glass or metal.
8. The memory cell of claim 1 , comprising the thickness of the active layer is between 20 and 2000 nm.
9. The memory cell of claim 7 , comprising wherein the thickness of the active layer is between 20 and 200 nm.
10. The memory cell of claim 1 , comprising wherein the first and/or second electrode consists of copper, aluminium, aluminium-copper, aluminium-silicon-copper, titanium, tantalum, tungsten, titanium nitride, TiW, TaW, WN, WCN or tantalum nitride and combinations thereof.
11. The memory cell of claim 1 , comprising wherein the first electrode is rotated by 40 degrees to 140 degrees relative to the second electrode.
12. The memory cell of claim 11 , wherein the first electrode is rotated by 90 degrees relative to the second electrode.
13. The memory cell of claim 11 , wherein the first electrode is rotated by substantially 90 degrees relative to the second electrode.
14. A memory comprising:
a first electrode;
a second electrode;
an active layer which is arranged between the first and the second electrode, the active layer comprising hexakisbenzylthiobenzene and dichlorodicyano-p-benzoquinone; and
a substrate selected from the group consisting of silicon, germanium, gallium arsenide, gallium nitride, any desired compound of silicon, germanium or gallium, a polymer, ceramic, glass or metal.
15. The memory of claim 14 , comprising the ratio of the hexakisbenzylthiobenzene to dichlorodicyano-p-benzoquinone is from 1:4 to 4:1.
16. The memory of claim 14 , the active layer further comprising a polymer.
17. The memory cell of claim 16 , comprising the amount by weight of the polymer, based on the total amount of the active material, is in the range between 0 and 70% by weight.
18. The memory cell of claim 17 , comprising wherein the polymer is a film forming carrier material.
19. The memory cell of claim 16 , comprising wherein the polymer is selected from the group consisting of polyether, polyacrylate, polyether sulphone, polyether sulphide, polyether ketone, polyquinoline, polyquinoxaline, polybenzoxazole, polybenzimida-zole or polyimide.
20. The memory cell of claim 14 , comprising the thickness of the active layer is between 20 and 2000 nm.
21. The memory cell of claim 20 , comprising wherein the thickness of the active layer is between 20 and 200 nm.
22. The memory cell of claim 21 , comprising wherein the first and/or second electrode consists of copper, aluminium, aluminium-copper, aluminium-silicon-copper, titanium, tantalum, tungsten, titanium nitride, TiW, TaW, WN, WCN or tantalum nitride and combinations thereof.
23. A memory cell comprising:
a first electrode;
a second electrode; and
means for switching a state of the memory cell, including an active layer which is arranged between the first and the second electrode, the active layer comprising hexakisbenzylthiobenzene and dichlorodicyano-p-benzoquinone.