SOI-based photonic bandgap devices
View Patent ↗An SOI-based photonic bandgap (PBG) electro-optic device utilizes a patterned PBG structure to define a two-dimensional waveguide within an active waveguiding region of the SOI electro-optic device. The inclusion of the PBG columnar arrays within the SOI structure results in providing extremely tight lateral confinement of the optical mode within the waveguiding structure, thus significantly reducing the optical loss. By virtue of including the PBG structure, the associated electrical contacts may be placed in closer proximity to the active region without affecting the optical performance, thus increasing the switching speed of the electro-optic device. The overall device size, capacitance and resistance are also reduced as a consequence of using PBGs for lateral mode confinement.
1. A photonic bandgap (PBG) electro-optic device formed within a silicon-on-insulator (SOI) structure comprising a silicon substrate, an insulating layer disposed over the substrate and a relatively thin silicon surface layer (SOI layer) formed over the insulating layer, the SOI layer used, at least in part, for guiding the mode of an optical signal propagating therethrough, the PBG electro-optic device comprising:
a relatively thin dielectric layer disposed over at least a portion of the SOI layer;
a silicon layer disposed over at least a portion of the relatively thin dielectric layer in a manner such that overlapping portions of the relatively thin SOI layer, the relatively thin dielectric layer and the silicon layer define an active region of the device, the silicon layer and SOI layer exhibiting complementary doping within the active region;
a plurality of columnar holes formed through the SOI structure and disposed in a predetermined pattern such that the spacing between adjacent holes defines a photonic bandgap structure including an optical waveguiding region within at least a portion of the SOI layer, the photonic bandgap structure providing lateral confinement of a propagating optical mode within the optical waveguiding region; and
first and second electrical contacts disposed at locations disparate from the optical waveguiding region and substantially adjacent to the plurality of columnar holes on the SOI structure so as to absorb a minimum amount of the signal propagating along the optical waveguiding region, wherein upon application of an electrical signal between the first and second electrical contacts, free carriers move such that the optical field of said propagating optical signal is bounded, at least in part in the lateral dimension, by the photonic bandgap structure, the optical field thereby substantially overlapping the free carrier concentration modulation area in the active region of the electro-optic device, wherein the first electrical contact is coupled to the SOI layer and the second electrical contact is coupled to the silicon layer such that upon application of an electrical signal between the first and second electrical contacts, free carriers accumulate, deplete or invert within the SOI layer and the silicon layer on both sides of the relatively thin dielectric layer at the same time.
2. A photonic bandgap electra-optic device as defined in claim 1 wherein the doping profiles of the silicon layer and the SOI layer are controlled so as to achieve maximum overlap between the propagating optical mode in the active region and the area of free carrier change, while simultaneously reducing the overall resistance in the paths to the electrical contacts.
3. A photonic bandgap (PBG) electra-optic device as defined in claim 1 wherein the plurality of holes extend from the silicon layer through the relatively thin dielectric layer and the SOI layer in a self-aligned manner.
4. A photonic bandgap (PBG) electro-optic device as defined in claim 1 wherein the plurality of holes of the PBG structure are formed within only the SOI layer.
5. A photonic bandgap (PBG) electra-optic device as defined in claim 1 wherein the plurality of holes of the PBG structure are formed within only the silicon layer.
6. A photonic bandgap (PBG) electro-optic device as defined in claim 1 wherein a first set of the plurality of holes of the PBG structure are formed within only the SOI layer and a second set of the plurality of holes of the PBG structure are formed within only the silicon layer, each set disposed at a separate boundary of the active waveguiding region so as to define the lateral confinement area.
7. A photonic bandgap (PBG) electra-optic device as defined in claim 1 wherein the plurality of holes are subsequently filled with a low refractive index material.
8. A photonic bandgap (PBG) electro-optic device as defined in claim 1 wherein the plurality of holes are subsequently filled with an oxide material.
9. A photonic bandgap (PBG) electro-optic device as defined in claim 1 wherein the plurality of holes are subsequently filled with a nitride material.
10. A photonic bandgap (PBG) electro-optic device as defined in claim 1 wherein the silicon layer comprises a form of silicon selected from the group consisting of: polysilicon, amorphous silicon, grain-size-enhanced polysilicon, grain-boundary-passivated polysilicon, grain-aligned polysilicon, strained silicon, substantially single crystal silicon, Si x Ge 1-x and single crystal silicon.
11. A photonic bandgap (PBG) electro-optic device as defined in claim 1 wherein the first electrical contact region comprises a plurality of separate contact areas disposed along the SOI layer in the direction of optical signal propagation so as to reduce optical signal loss while providing low series resistance.
12. A photonic bandgap (PBG) electro-optic device as defined in claim 1 wherein the second electrical contact region comprises a plurality of separate contact areas disposed along the silicon layer in the direction of optical signal propagation so as to reduce optical signal loss while providing low series resistance.
13. A photonic bandgap (PBG) electro-optic device as defined in claim 1 wherein a first set of columnar holes of the plurality of holes is disposed to form a first lateral confinement boundary for the optical waveguiding region and a second set of columnar holes is disposed to form a second lateral confinement boundary, wherein the characteristics, of the holes are controlled such that essentially all of the propagating mode is confined within the optical waveguiding region and optical loss is minimized.
14. A photonic bandgap (PBG) electro-optic device as defined in claim 1 wherein the SOI layer exhibits n-type conductivity and the silicon layer exhibits p-type conductivity.
15. A photonic bandgap (PBG) electro-optic device as defined in claim 1 wherein the doping profiles of the silicon layer and the SOI layer are graded so as to form a lightly doped active region and a heavily doped electrical contact region.
16. A photonic bandgap (PBG) electro-optic device as defined in claim 1 wherein the SOI layer exhibits p-type conductivity and the silicon layer exhibits n-type conductivity.