IP Library Granted Patent US 7,157,716
Granted Patent B2
US 7,157,716 · App. 11/045,153 · Granted Jan 2, 2007

Semiconductor radiation detector and radiation detection apparatus

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Quick Facts
Patent No.
US 7,157,716
App. No.
11/045,153
Granted
Jan 2, 2007
Kind
B2
Abstract

The present invention provides a semiconductor radiation detector and radiation detection apparatus capable of improving energy resolution and the semiconductor radiation detection apparatus includes a semiconductor radiation detector and a signal processing circuit which processes a radiation detection signal output from the semiconductor radiation detector. The semiconductor radiation detector is provided with anode electrodes A and cathode electrodes C disposed so as to face each other with semiconductor radiation detection elements placed in-between. The semiconductor radiation detection element is made up of a single crystal of thallous bromide containing trivalent thallium (e.g., tribromobis thallium). The semiconductor radiation detector containing such a semiconductor radiation detection element reduces lattice defects in the single crystal and thereby increases charge collection efficiency.

Claims (18)

1. A semiconductor radiation detector comprising:

a single crystal of thallium bromide containing 80.0 to 99.9 mol % of thallous bromide and 0.1 to 20.0 mol % of trivalent thallium (in terms of tribromobis thallium);

a first electrode attached to one surface of said single crystal; and

a second electrode attached to the other surface of said single crystal, said single crystal being interposed between said first electrode and said second electrode,

wherein a radiation detection signal is output from one of said single crystal and said second electrode.

2. The semiconductor radiation detector according to claim 1 , wherein said single crystal of thallium bromide contains 5.0 to 99.5 mol % of said thallous bromide and 0.5 to 5.0 mol % of said trivalent thallium (in terms of tribromobis thallium).

3. The semiconductor radiation detector according to claim 2 , wherein said trivalent thallium is contained as tribromobis thallium.

4. The semiconductor radiation detector according to claim 2 , wherein 0.5 to 5.0 mol % of said trivalent thallium in terms of said tribromobis thallium is 0.5 to 5.0 mol % of single Br in terms of said tribromobis thallium.

5. The semiconductor radiation detector according to claim 1 , wherein said trivalent thallium is contained as tribromobis thallium.

6. The semiconductor radiation detector according to claim 1 , wherein 0.1 to 20.0 mol % of said trivalent thallium in terms of said tribromobis thallium is 0.1 to 20.0 mol % of single Br in terms of said tribromobis thallium.

7. A radiation detection apparatus comprising:

a semiconductor radiation detector provided with a single crystal of thallium bromide containing 80.0 to 99.9 mol % of thallous bromide and 0.1 to 20.0 mol % of trivalent thallium (in terms of tribromobis thallium), a first electrode attached to one surface of said single crystal and a second electrode attached to the other surface of said single crystal, said single crystal being interposed between said first electrode and said second electrode; and

a signal processing apparatus which processes a radiation detection signal output from one of said first electrode and said second electrode.

8. The radiation detection apparatus according to claim 7 , wherein said single crystal of thallium bromide contains 5.0 to 99.5 mol % of said thallous bromide and contains 0.5 to 5.0 mol % of said trivalent thallium (in terms of tribromobis thallium).

9. The radiation detection apparatus according to claim 8 , wherein said trivalent thallium is contained as tribromobis thallium.

10. The radiation detection apparatus according to claim 8 , wherein 0.5 to 5.0 mol % of said trivalent thallium in terms of said tribromobis thallium is 0.5 to 5.0 mol % of single Br in terms of said tribromobis thallium.

11. The radiation detection apparatus according to claim 7 , wherein said trivalent thallium is contained as tribromobis thallium.

12. The radiation detection apparatus according to claim 7 , wherein 0.1 to 20.0 mol % of said trivalent thallium in terms of said tribromobis thallium is 0.1 to 20.0 mol % of single Br in terms of said tribromobis thallium.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 4, 2021
From: HITACHI, LTD.
To: FUJIFILM HEALTHCARE CORPORATION
Reel/Frame 058026/0559 →