Electrostatic discharge protection device and method of manufacturing the same
View Patent ↗An electrostatic discharge protection device that includes a semiconductor substrate of a first dopant type, at least one source/drain pair of a second dopant type formed in the substrate, wherein the source/drain pair is separated to define a channel region therebetween, a lightly-doped region of the first dopant type defined between the source/drain pair and including at least a portion of the channel region, a gate dielectric layer formed over the substrate, and a gate formed over the gate dielectric layer and above the channel region.
1. A method, comprising:
providing a semiconductor substrate of a first dopant type;
forming a well region of the first dopant type in the substrate;
forming a lightly doped region of the first dopant type in the well region;
forming at least one source/drain pair of a second dopant type in the substrate, wherein a source region of the source/drain pair is separated from a drain region of the source/drain pair by a channel region;
forming a gate on the substrate and over both the channel region and the lightly doped region so that the lightly doped region is directly below a central portion of the gate;
forming lightly doped drain (LDD) regions of the second dopant type adjacent to the gate;
forming a first diffused region of the second dopant type under the drain region of the source/drain pair; and
forming a second diffused region of the second dopant type under the source region of the source/drain pair.
2. The method of claim 1 , wherein the gate is formed over the well region of the first dopant type.
3. The method of claim 1 , further comprising forming a sidewall spacer adjacent to the gate and over the LDD regions.
4. The method of claim 1 , wherein the first dopant type comprises a p-type dopant, and wherein the second dopant type comprises an n-type dopant.
5. The method of claim 1 , wherein the lightly doped region is formed to be contiguous with both the source region and the drain region.
6. The method of claim 1 , wherein the first and second diffused regions extend into a portion of the LDD regions.
7. The method of claim 6 , further comprising forming pocket regions of the first dopant type adjacent to the source and drain regions and below the LDD regions.
8. The method of claim 7 , wherein the lightly doped region is formed to be contiguous with the source region and the drain region through the pocket regions.
9. A method, comprising:
providing a semiconductor substrate of a first dopant type;
forming at least one source/drain pair of a second dopant type in the substrate, wherein a source region of the source/drain pair is separated from a drain region of the source/drain pair by a channel region;
forming a gate on the substrate and over the channel region;
forming lightly doped drain (LDD) regions of the second dopant type adjacent to the gate;
forming a first diffused region of the second dopant type under the drain region of the source/drain pair;
forming a second diffused region of the second dopant type under the source region of the source/drain pair; and
forming a third diffused region of the second dopant type under the first diffused region.
10. The method of claim 9 , further comprising forming a sidewall spacer adjacent to the gate and over the LDD regions.
11. The method of claim 9 , wherein the first dopant type comprises a p-type dopant, and wherein the second dopant type comprises an n-type dopant.
12. The method of claim 9 , wherein the first and second diffused regions extend into a portion of the LDD regions.
13. The method of claim 9 , further comprising forming pocket regions of the first dopant type adjacent to the source and drain regions and below the LDD regions.
14. The method of claim 13 , wherein the first and second diffused regions extend into a portion of the LDD regions and the pocket regions.
15. The method of claim 9 , further comprising:
forming isolation regions adjacent to the source and drain regions; and
forming doped regions of the first dopant type adjacent to the source and drain regions.
16. The method of claim 9 , further comprising:
forming a third diffused region of the second dopant type under the first diffused regions; and
forming a fourth diffused region of the second dopant type under the second diffused region.
17. A method, comprising:
providing a semiconductor substrate of a first dopant type;
forming at least one source/drain pair of a second dopant type in the substrate, wherein a source region of the source/drain pair is separated from a drain region of the source/drain pair by a channel region;
forming a gate on the substrate and over the channel region;
forming pocket regions of the first dopant type adjacent to the source and drain regions in the channel region;
forming a first diffused region of the second dopant type under the drain region of the source/drain pair;
forming a second diffused region of the second dopant type under the source region of the source/drain pair; and
forming a third diffused region of the second dopant type under the first diffused region;
wherein a region under the second diffused region is a portion of the substrate having the first dopant type.
18. The method of claim 17 , further comprising forming lightly doped drain (LDD) regions of the second dopant type adjacent to the gate.
19. The method of claim 18 , further comprising forming a sidewall spacer adjacent to the gate and over the LDD regions.
20. The method of claim 18 , wherein the first and second diffused regions extend into a portion of the LDD regions.
21. The method of claim 18 , wherein the pocket regions are below the LDD regions.
22. The method of claim 21 , wherein the first and second diffused regions extend into a portion of the LDD regions and the pocket regions.
23. The method of claim 17 , wherein the first dopant type comprises a p-type dopant, and wherein the second dopant type comprises an n-type dopant.
24. The method of claim 17 , further comprising:
forming isolation regions adjacent to the source and drain regions; and
forming doped regions of the first dopant type adjacent to the source and drain regions.