Strained silicon devices transfer to glass for display applications
View Patent ↗A method of fabricating strained silicon devices for transfer to glass for display applications includes preparing a wafer having a silicon substrate thereon; forming a relaxed SiGe layer on the silicon substrate; forming a strained silicon layer on the relaxed SiGe layer; fabricating an IC device on the strained silicon layer; depositing a dielectric layer on the wafer to cover a gate module of the IC device; smoothing the dielectric; implanting ions to form a defect layer; cutting the wafer into individual silicon dies; preparing a glass panel and the silicon dies for bonding; bonding the silicon dies onto the glass panel to form a bonded structure; annealing the bonded structure; splitting the bonded structure along the defect layer; removing the remaining silicon layer from the silicon substrate and relaxed SiGe layer on the silicon die on the glass panel; and completing the glass panel circuitry.
1. A method of fabricating strained silicon devices for transfer to glass for display applications, comprising:
preparing a wafer having a silicon substrate thereon;
forming a relaxed SiGe layer on the silicon substrate;
forming a strained silicon layer on the relaxed SiGe layer;
fabricating an IC device on the strained silicon layer;
depositing a dielectric layer on the wafer to cover the IC device;
smoothing the dielectric;
implanting ions to form a defect layer;
cutting the wafer into individual silicon dies;
preparing a glass panel and the silicon dies for bonding;
bonding the silicon dies onto the glass panel to form a bonded structure;
annealing the bonded structure;
splitting the bonded structure along the defect layer;
removing the remaining silicon layer from the silicon substrate and relaxed SiGe layer on the silicon die on the glass panel; and
completing the glass panel circuitry.
2. The method of claim 1 wherein said implanting ions includes implanting ions taken from the group of ions consisting of H + , H 2 + , Ar + , He + , and combinations thereof.
3. The method of claim 1 wherein said implanting includes implanting ions into the silicon substrate.
4. The method of claim 1 wherein said implanting includes implanting ions into the SiGe layer.
5. The method of claim 1 wherein said removing the remaining silicon from the silicon substrate and SiGe layer includes removing the remaining silicon from the silicon substrate and SiGe layer by a method taken from the group of methods taken from dry etch, wet etch, CMP, a selective etch and a combination of such methods.
6. A method of fabricating strained silicon devices for transfer to glass for display applications, comprising:
preparing a wafer having a silicon substrate thereon;
forming a relaxed SiGe layer on the silicon substrate;
forming a strained silicon layer on the relaxed SiGe layer;
fabricating an IC device on the strained silicon layer;
depositing a dielectric layer on the wafer to cover a gate module of the IC device;
smoothing the dielectric;
implanting ions to form a defect layer, including implanting ions taken from the group of ions consisting of H + , H 2 + , Ar + , He + , and combinations thereof;
preparing a glass panel and the silicon dies for bonding;
bonding the silicon dies onto the glass panel to form a bonded structure;
annealing the bonded structure;
splitting the bonded structure along defect layer;
removing the remaining silicon layer from the silicon substrate and relaxed SiGe layer on the silicon die on the glass panel; and
completing the glass panel device.
7. The method of claim 1 wherein said implanting includes implanting ions into the silicon substrate.
8. The method of claim 6 wherein said implanting includes implanting ions into the SiGe layer.
9. The method of claim 6 wherein said removing the remaining silicon from the silicon substrate and SiGe layer includes removing the remaining silicon from the silicon substrate and SiGe layer by a method taken from the group of methods taken from dry etch, wet etch, CMP, a selective etch and a combination of such methods.
10. A method of fabricating strained silicon devices for transfer to glass for display applications, comprising:
preparing a wafer having a silicon substrate thereon;
forming a relaxed SiGe layer on the silicon substrate;
forming a strained silicon layer on the relaxed SiGe layer;
fabricating an IC device on the strained silicon layer;
depositing a dielectric layer on the wafer to cover the IC device;
smoothing the dielectric;
implanting ions to form a defect layer wherein said implanting includes implanting ions into the SiGe layer;
cutting the wafer into individual silicon dies;
preparing a glass panel and the silicon dies for bonding;
bonding the silicon dies onto the glass panel to form a bonded structure;
annealing the bonded structure;
splitting the bonded structure along the defect layer;
removing the remaining silicon layer from the silicon substrate and relaxed SiGe layer on the silicon dies on the glass panel; and
completing the glass panel circuitry.
11. The method of claim 10 wherein said implanting ions includes implanting ions taken from the group of ions consisting of H + , H 2 + . Ar + , He + , and combinations thereof.
12. The method of claim 10 wherein said removing the remaining silicon from the silicon substrate and SiGe layer includes removing the remaining silicon from the silicon substrate and SiGe layer by a method taken from the group of methods taken from dry etch, wet etch, CMP, a selective etch and a combination of such methods.