Temperature compensated lasers
View Patent ↗A novel approach for providing temperature compensation for semiconductor lasers is disclosed. This approach utilizes reflectivity characteristics in the at least one of the mirrors of the semiconductor laser to provide temperature compensation to the device.
1. A device comprising a vertical-cavity surface-emitting laser (VCSEL) comprising:
a substrate;
a bottom mirror located above the substrate;
an active region located above the bottom mirror;
a top mirror located above the active region;
a top contact mounted on a first conductive spacer located above the active region;
top interconnect metal in electrical contact with the top contact;
a bottom contact mounted on a second conductive spacer located below the active region; and
an additional metal piece mounted on the first conductive spacer, wherein the additional metal piece and the top contact are separated from each other by a gap.
2. The device of claim 1 , wherein the additional metal piece is thicker than the top contact.
3. The device of claim 1 , wherein the additional metal piece is separated from the top interconnect metal by the gap.
4. The device of claim 1 , wherein the substrate comprises InP.
5. The device of claim 1 , wherein the substrate comprises GaAs.
6. A device comprising a vertical-cavity surface-emitting laser (VCSEL) comprising:
a substrate;
a bottom mirror located above the substrate;
an active region located above the bottom mirror;
a first top contact mounted on a first conductive spacer located above the active region;
a second top contact mounted on the first conductive spacer;
a top mirror mounted on the first conductive spacer and extending upwards between the first top contact and the second top contact;
a bottom contact mounted on a second conductive spacer located below the active region; and
an additional metal piece mounted on the first conductive spacer, wherein the additional metal piece and the first top contact are separated from each other by a gap.
7. The device of claim 6 , wherein the additional metal piece is thicker than the first top contact.
8. The device of claim 7 , wherein the additional metal piece is separated from the first top interconnect metal by the gap.
9. The device of claim 7 , wherein the substrate comprises InP.
10. The device of claim 7 , wherein the substrate comprises GaAs.
11. The device of claim 1 , wherein the additional metal piece and the top contact are separated from each other only by the gap.
12. The device of claim 6 , wherein the additional metal piece and the top contact are separated from each other only by the gap.