Semiconductor device assembly process

1. A method for making a semiconductor device, comprising:

providing at least one semiconductor wafer;

forming a conductive epoxy layer on a substantial portion of a first side of the semiconductor wafer to form a coated wafer prior to dicing the semiconductor wafer, wherein the conductive epoxy layer is contained to only the first side of the semiconductor wafer, wherein the conductive epoxy comprises metal filled conductive material;

following the forming of the conductive epoxy layer on the substantial portion of the first side of the semiconductor wafer, curing the coated wafer to form a cured wafer;

mounting the cured wafer to a substrate; and

following the curing, forming coated die having the conductive epoxy layer on the substantial portion of the first side by cutting the cured wafer attached to the substrate.

2. The method of claim 1 , further comprising:

coupling an exposed side of the conductive epoxy layer of the coated die to a lead frame to form the semiconductor device, the exposed side of the conductive epoxy layer of the coated die corresponding to the exposed side of the conductive epoxy layer of the cured wafer; and

curing the semiconductor device.

3. The method of claim 2 , further comprising wire bonding at least one conductor to at least one area of an exposed side of the coated die, the exposed side of the coated die corresponding to the second side of semiconductor wafer.

4. The method of claim 2 , wherein curing the semiconductor device further comprises:

placing the semiconductor device in an environment that includes a nitrogen-rich atmosphere; and

controlling a temperature of the environment by incrementally raising the temperature to a curing temperature during a first time period and maintaining the environment at the curing temperature for a second time period.

5. The method of claim 4 , wherein the curing temperature is approximately 175 degrees Celsius, the first time period is approximately thirty (30) minutes, and the second time period is approximately ninety (90) minutes.

6. A method comprising:

applying a conductive epoxy layer to a substantial portion of a first side of a semiconductor wafer to form a coated wafer, wherein the conductive epoxy layer is contained to only the first side of the semiconductor wafer prior to dicing the semiconductor wafer, wherein the conductive epoxy comprises metal filled conductive material;

following the applying of the conductive epoxy layer to the substantial portion of the first side of the semiconductor wafer, curing the coated wafer;

mounting the cured wafer to a substrate; and

following the curing, forming coated die from the coated wafer, the coated die having the conductive epoxy layer on the substantial portion of the first side;

coupling an exposed side of the conductive epoxy layer of the coated die to a lead frame to form a semiconductor device;

wire bonding at least one conductor to at least one area of an exposed side of the die, wherein the exposed side of the die is opposite the exposed side of the conductive epoxy layer.

7. The method of claim 6 , wherein curing the semiconductor device further comprises:

placing the semiconductor device in an environment that includes a nitrogen-rich atmosphere; and

controlling a temperature of the environment by incrementally raising the temperature to a curing temperature during a first time period and maintaining the environment at the curing temperature for a second time period.

8. The method of claim 7 , wherein the curing temperature is approximately 175 degrees Celsius, the first time period is approximately thirty (30) minutes, and the second time period is approximately ninety (90) minutes.

9. A semiconductor device comprising a coated die having a conductive epoxy layer on a substantial portion of a first side, and a lead frame, the semiconductor device formed by:

forming the conductive epoxy layer on the substantial portion of the first side of the semiconductor wafer to form a coated wafer prior to dicing the semiconductor wafer, wherein the conductive epoxy layer is contained to only the first side of the semiconductor wafer, wherein the conductive epoxy comprises metal filled conductive material;

following the forming of the conductive epoxy layer on the substantial portion of the first side of the semiconductor wafer, curing the coated wafer to form a cured wafer;

mounting the cured wafer to a substrate;

following the curing, cutting the cured wafer to form at least one coated die having the conductive epoxy layer on the substantial portion of the first side; and

coupling the exposed side of the conductive epoxy layer of the coated die to the lead frame to form the semiconductor device.

10. The device of claim 9 , wherein the semiconductor device is further formed by:

curing the semiconductor device; and

wire bonding at least one conductor to at least one area of an exposed side of the die as coupled to the lead frame, the exposed side of the die corresponding to the second side of semiconductor wafer.

11. The device of claim 10 , wherein curing the semiconductor device further comprises:

placing the semiconductor device in an environment that includes a nitrogen-rich atmosphere; and

controlling a temperature of the environment by incrementally raising the temperature to a curing temperature during a first time period and maintaining the environment at the curing temperature for a second time period.

12. The device of claim 11 , wherein the curing temperature is approximately 175 degrees Celsius, the first time period is approximately thirty (30) minutes, and the second time period is approximately ninety (90) minutes.