Radio frequency arrangement, method for producing a radio frequency arrangement and use of the radio frequency arrangement

1. A radio frequency arrangement, comprising:

a first semiconductor body with an integrated circuit formed therein configured to provide signal processing, wherein the first semiconductor body comprises, on a first partial surface thereof, a first and a second terminal configured to output or receive a signal;

a second semiconductor body with a charge store integrated therein, wherein the second semiconductor body comprises, on a first partial surface, a first and a second contact location configured to receive or output charge to the charge store;

wherein the first partial surfaces of the first and second semiconductor bodies are arranged in a manner facing one another, and wherein the first terminal and the first contact location are coupled together and the second terminal and the second contact location are coupled together

an antenna configured to receive or output a radio frequency signal, wherein the antenna is connected to a third and a fourth terminal of the first semiconductor body;

wherein the integrated circuit of the first semiconductor body is configured to convert a time-varying signal applied to the third and the fourth terminal into a DC voltage signal, and output the DC voltage signal to the first and the second terminal; and

wherein the coupling of the first terminal to the first contact location and of the second terminal and to the second contact location comprises a laminate, the laminate comprising:

a first partial surface with a first and a second terminal; and a second partial surface opposite to the first partial surface thereof, with a third terminal thereon, wherein the third terminal is connected to the first terminal on the first partial surface, and having a fourth terminal on the second partial surface that is connected to the second terminal on the first partial surface, and

wherein the laminate comprises a metallized region comprising an antenna.

2. The radio frequency arrangement of claim 1 , wherein the integrated circuit of the first semiconductor body is configured to receive a first potential at the first terminal and a second potential at the second terminal.

3. The radio frequency arrangement of claim 1 , wherein the charge store of the second semiconductor body comprises a capacitor.

4. The radio frequency arrangement of claim 3 , wherein the capacitor of the second semiconductor body comprises a trench capacitor in a substrate of the second semiconductor body.

5. The radio frequency arrangement of claim 3 , wherein the capacitor comprises a storage density of about one farad/mm2.

6. The radio frequency arrangement of claim 1 , wherein the charge store comprises at least two parallel-connected capacitors integrated in the second semiconductor body.

7. The radio frequency arrangement of claim 1 , further comprising an electrically conductive solder arranged between the respective terminals and respective contact locations, wherein the solder electrically connects the respective terminals to the respective contact locations.

8. A radio frequency arrangement, comprising:

a laminate body having a top side and a bottom side, and a plurality of pass-through contacts extending from the top side to the bottom side;

a first semiconductor body having a radio frequency circuit formed in a first surface thereof, wherein the first surface of the first semiconductor body faces the bottom side of the laminate body; and

a second semiconductor body having a charge store formed in a first surface thereof, wherein the first surface of the second semiconductor body faces the top side of the laminate body,

wherein contacts associated with the charge store are coupled to terminals associated with the radio frequency circuit through the pass-through contacts,

further comprising a third semiconductor body having memory circuitry formed in a first surface thereof, wherein the first surface of the third semiconductor body faces the top side of the laminate body and is operably coupled to the charge store via a surface contact and to the radio frequency circuit through the pass-through contacts.

9. The radio frequency arrangement of claim 8 , further comprising an antenna formed on the first surface of the first semiconductor body, and configured to provide energy received via incoming radio frequency signals to the radio frequency circuit for powering thereof.

10. The radio frequency arrangement of claim 9 , wherein the antenna is coupled to the charge store through one or more pass-through contacts, and configured to store excess energy therein.

11. The radio frequency arrangement of claim 8 , wherein the memory circuitry is configured to selectively receive power from the charge store.

12. A radio frequency arrangement, comprising:

a laminate body having a top side and a bottom side, and a plurality of pass-through contacts extending from the top side to the bottom side;

a first semiconductor body having a radio frequency circuit formed in a first surface thereof, wherein the first surface of the first semiconductor body faces the bottom side of the laminate body;

a second semiconductor body having a charge store formed in a first surface thereof, wherein the first surface of the second semiconductor body faces the top side of the laminate body;

wherein contacts associated with the charge store are coupled to terminals associated with the radio frequency circuit through the pass-through contacts; and

wherein a metallized region in the form of an antenna is applied to the top side of the laminate body.

13. The radio frequency arrangement of claim 12 , further comprising a third semiconductor body having memory circuitry formed in a first surface thereof, wherein the first surface of the third semiconductor body faces the top side of the laminate body and is operably coupled to the charge store via a surface contact and to the radio frequency circuit through the pass-through contacts.