Semiconductor device and method for manufacturing the same
View Patent ↗A semiconductor device includes a semiconductor substrate, an isolation film that is provided in one principal surface of the semiconductor substrate, wiring that is arranged on the isolation film, a diffusion layer that is formed inside the semiconductor substrate and located in the vicinity of the isolation film, and an insulating film that covers the diffusion layer over the one principal surface of the semiconductor substrate. The insulating film further covers a portion of the isolation film near to the diffusion layer and comes into contact with the side of the wiring near to the diffusion layer.
1. A semiconductor device comprising:
a semiconductor substrate;
an isolation film that is provided in one principal surface of the semiconductor substrate;
wiring that is arranged on the isolation film;
a diffusion layer that is formed inside the semiconductor substrate and located in a vicinity of the isolation film; and
an insulating film that covers the diffusion layer completely over the one principal surface of the semiconductor substrate,
wherein the insulating film covering the diffusion layer completely further covers a portion of the isolation film near to the diffusion layer continuously and comes into contact with a side of the wiring near to the diffusion layer,
an entire upper surface of the wiring is exposed from the insulating film; and
a top portion of the insulating film is positioned above the upper surface of the wiring.
2. The semiconductor device according to claim 1 , wherein the semiconductor device is an image sensor that comprises an image region with a plurality of pixels and a peripheral circuit region comprising a driving circuit for driving the image region.
3. The semiconductor device according to claim 2 , wherein the diffusion layer is a diffusion layer of a photodiode in each of the pixels, and the wiring is wiring in each of the pixels.
4. The semiconductor device according to claim 3 , wherein each of the pixels comprises a transfer gate that is provided on the one principal surface of the semiconductor substrate in a vicinity of the diffusion layer, and the insulating film is formed so as to further cover a part of a surface of the transfer gate that faces away from the semiconductor substrate.
5. The semiconductor device according to claim 2 , wherein the peripheral circuit region comprises a gate electrode and a sidewall spacer that is formed of the insulating film arranged in contact with a side of the gate electrode.
6. The semiconductor device according to claim 1 , wherein the entire upper surface of the wiring that is exposed from the insulating film is silicided.
7. A semiconductor device comprising:
a semiconductor substrate;
an isolation film that is provided in one principal surface of the semiconductor substrate;
wiring that is arranged on the isolation film;
a diffusion layer that is formed inside the semiconductor substrate and located in a vicinity of the isolation film; and
an insulating film that covers the diffusion layer completely over the one principal surface of the semiconductor substrate, but does not cover any of an upper surface of the wiring,
wherein the insulating film covering the diffusion layer completely further covers a portion of the isolation film near to the diffusion layer continuously and comes into contact with an entire side of the wiring near to the diffusion layer, and a top portion of the insulating film is positioned above the upper surface of the wiring.
8. The semiconductor device according to claim 7 , wherein the semiconductor device is an image sensor that comprises an image region with a plurality of pixels and a peripheral circuit region comprising a driving circuit for driving the image region.
9. The semiconductor device according to claim 8 , wherein the diffusion layer is a diffusion layer of a photodiode in each of the pixels, and the wiring is wiring in each of the pixels.
10. The semiconductor device according to claim 9 , wherein each of the pixels comprises a transfer gate that is provided on the one principal surface of the semiconductor substrate in a vicinity of the diffusion layer, and the insulating film is formed so as to further cover a part of a surface of the transfer gate that faces away from the semiconductor substrate.
11. The semiconductor device according to claim 8 , wherein the peripheral circuit region comprises a gate electrode and a sidewall spacer that is formed of the insulating film arranged in contact with a side of the gate electrode.
12. The semiconductor device according to claim 7 , wherein the entire upper surface of the wiring that is exposed from the insulating film is silicided.