Balanced high-frequency device and balanced high-frequency circuit using the same
View Patent ↗A balanced high-frequency device includes a balanced element; at least one balanced terminal connected to the balanced element; a phase circuit having at least first, second, and third impedance elements, and electrically connected between the balanced element and the balanced terminal. The first impedance element and the second impedance element are connected between the balanced terminals in series, the connection point between the first impedance element and the second impedance element is grounded through the third impedance element, a series resonant circuit is formed by the first impedance element and the third impedance element. A series resonant circuit is formed by the second impedance element and the third impedance element, and an impedance to a differential signal component in the passing band of the balanced elements of the first and second impedance elements is set so as to increase to the ground plane.
1. A balanced high-frequency device comprising:
a balanced element;
at least one balanced terminal connected to the balanced element;
a phase circuit having at least first, second, and third impedance elements, and electrically connected between the balanced element and the balanced terminals; wherein
the first impedance element and the second impedance element are connected between the balanced terminals in series,
the connection point between the first impedance element and the second impedance element is grounded through the third impedance element,
a series resonant circuit is formed by the first impedance element and the third impedance element,
a series resonant circuit is formed by the second impedance element and the third impedance element,
an impedance to a differential signal component in the passing band of the balanced element of the first and second impedance elements is set so as to increase to the ground plane,
the balanced elements are surface acoustic wave filters,
the surface acoustic wave filters respectively have a piezoelectric substrate and IDT electrodes serving as a plurality of inter-digital transducer electrodes formed on the piezoelectric substrate, and
at least one of the IDT electrodes is connected to a balanced input terminal or balanced output terminal.
2. A balanced high-frequency device comprising:
a balanced element;
at least one balanced terminal connected to the balanced element;
a phase circuit having at least first, second, and third impedance elements, and electrically connected between the balanced element and the balanced terminals; wherein
the first impedance element and the second impedance element are connected between the balanced terminals in series,
the connection point between the first impedance element and the second impedance element is grounded through the third impedance element,
a series resonant circuit is formed by the first impedance element and the third impedance element,
a series resonant circuit is formed by the second impedance element and the third impedance element,
an impedance to a differential signal component in the passing band of the balanced element of the first and second impedance elements is set so as to increase to the around plane, and
the balanced element is constituted of a filter using a FBAR.
3. The balanced high-frequency device according to claim 1 or 2 , wherein
the first and second impedance elements are inductors, and
the third impedance element is a capacitor.
4. The balanced high-frequency device according to claim 1 or 2 , wherein
an impedance in the passing band of the balanced element of the first and second impedance elements is set so that a value normalized by the characteristic impedance value of either of the balanced terminals becomes 3 or more.
5. The balanced high-frequency device according to claim 1 or 2 , wherein
an impedance in the passing band of the balanced element of the first and second impedance elements is set so that a value normalized by the characteristic impedance value of either of the balanced terminals becomes 50 or less.
6. The balanced high-frequency device according to claim 1 or 2 , wherein
an impedance in the passing band of the balanced elements of the first and second impedance elements is set so that a value normalized by the characteristic impedance value of either of the balanced terminals ranges between 3 and 50.
7. The balanced high-frequency device according to claim 1 or 2 , wherein
the first and second impedance elements are capacitors, and
the third impedance element is an inductor.
8. The balanced high-frequency device according to claim 1 , wherein
each of the surface acoustic wave filters is a longitudinal-mode (coupled) surface acoustic wave filter in which at least first, second, and third IDT electrodes are arranged along the propagation direction of a surface acoustic wave,
the second and third IDT electrodes are arranged at both sides of the first IDT electrode,
the first IDT electrode is the balanced type, and
one and an other electrode fingers constituting the first IDT electrode are connected to balanced input terminals or balanced output terminals.
9. The balanced high-frequency device according to claim 1 , wherein
the surface acoustic wave filters are longitudinal-mode (coupled) surface acoustic wave filters in which at least first, second, and third IDT electrodes are arranged along the propagation direction of a surface acoustic wave,
the second and third IDT electrodes are arranged at both sides of the first IDT electrode,
the fist IDT electrode is constituted of a plurality of split IDT electrodes, and
at least two of the split IDT electrodes are connected to a balanced input terminals or balanced output terminals.
10. The balanced high-frequency device according to claim 1 , wherein
the surface acoustic wave filters are longitudinal-mode (coupled) surface acoustic wave filters in which at least first, second, and third IDT electrodes are arranged along the propagation direction of a surface acoustic wave,
the second and third IDT electrodes are arranged at both sides of the first IDT electrode,
the second IDT electrode is connected to either of balanced input terminals or either of balanced output terminals, and
the third IDT electrode is connected to the other of the balanced input terminals or the other of the balanced output terminals.
11. A balanced high-frequency circuit comprising:
a balanced element;
a circuit board installing the balanced element;
balanced transmission lines on the circuit board; and
a phase circuit connected between the balanced lines, wherein
the phase circuit is the phase circuit of claim 2 , and
the balanced element is the balanced element of claim 2 .
12. A balanced high-frequency circuit having the balanced high-frequency device according to claim 1 or 2 .
13. A balanced high-frequency circuit having the balanced high-frequency device according to claim 1 , wherein
the balanced high-frequency device of claim 1 is used for a transmitting filter and/or receiving filter constituting the balanced high-frequency circuit.
14. A balanced high-frequency circuit having the balanced high-frequency device according to claim 2 , wherein
the balanced high-frequency device of claim 2 is used for a transmitting filter and/or receiving filter constituting the balanced high-frequency circuit.
15. A balanced high-frequency circuit comprising:
a balanced element:
a circuit board installing the balanced element;
balanced transmission lines on the circuit board; and
a phase circuit connected between the balanced lines, wherein
the phase circuit is the phase circuit of claim 1 , and
the balanced element is the balanced element of claim 1 .
16. The high-frequency circuit according to claim 15 or 11 , wherein
an impedance in a desired passing band of the first and second impedance elements is set so that a value normalized by a characteristic impedance value of either of the balanced terminals ranges between 3 and 50.
17. The balanced high-frequency circuit according to claim 15 or 11 , wherein
an impedance in a desired passing band of the first and second impedance elements is set so that a value normalized by a characteristic impedance value of either of the balanced terminals becomes 3 or more.
18. The balanced high-frequency circuit according to claim 15 or 11 , wherein
an impedance in a desired passing band of the first and second impedance elements is set so that a value normalized by a characteristic impedance value of either of the balanced terminals becomes 50 or less.