Solution synthesis of germanium nanocrystals
View Patent ↗A method for providing a route for the synthesis of a Ge(0) nanometer-sized material from. A Ge(II) precursor is dissolved in a ligand heated to a temperature, generally between approximately 100° C. and 400° C., sufficient to thermally reduce the Ge(II) to Ge(0), where the ligand is a compound that can bond to the surface of the germanium nanomaterials to subsequently prevent agglomeration of the nanomaterials. The ligand encapsulates the surface of the Ge(0) material to prevent agglomeration. The resulting solution is cooled for handling, with the cooling characteristics useful in controlling the size and size distribution of the Ge(0) materials. The characteristics of the Ge(II) precursor determine whether the Ge(0) materials that result will be nanocrystals or nanowires.
1. A method of making germanium nanomaterials, comprising:
dissolving a Ge(II) precursor compound in a ligand to form a precursor solution, said Ge(II) precursor compound comprising a compound that comprises a germanium atom bonded to an atom selected from a nitrogen atom and an oxygen atom; and
heating said precursor solution to thermally reduce the Ge(II) precursor compounds to form Ge(0) nanomaterials in solution.
2. The method of claim 1 wherein said precursor solution comprises an additional solvent.
3. The method of claim 2 wherein said solvent is a coordinating solvent.
4. The method of claim 2 wherein said solvent is a noncoordinating solvent.
5. The method of claim 4 wherein said solvent is octadecene.
6. The method of claim 5 wherein said ligand comprises a heteroatom selected from the group consisting of oxygen, nitrogen, sulfur, phosphorous, and boron.
7. The method of claim 5 wherein said ligand is oleylamine.
8. The method of claim 7 wherein said formed Ge(0) nanomaterials are nanocrystals.
9. The method of claim 1 wherein said ligand has a free electron pair.
10. The method of claim 1 wherein said Ge(II) precursor compound is Ge(N(Si(CH 3 ) 3 ) 2 ) 2 .
11. The method of claim 1 wherein said Ge(II) precursor compound is Ge(OC 6 H 3 (C(CH 3 ) 3 ) 2 ) 2 .
12. The method of claim 1 wherein said formed Ge(0) nanomaterials are nanowires.
13. The method of claim 1 further comprising the step of washing the formed Ge(0) nanomaterials in solution with an organic solvent to form a precipitate of said Ge(0) nanomaterials.