Solvents and methods using same for removing silicon-containing residues from a substrate
A method for the removal of residues comprising silicon from at least a portion of the top and back of a substrate and/or deposition apparatus is disclosed herein. In one aspect, there is provided a method for removing residues comprising: treating the coated substrate and/or deposition apparatus with a removal solvent.
1 . A method for removing residues comprising silicon from at least a portion of coated substrate and/or deposition apparatus, the method comprising:
treating the coated substrate and/or deposition apparatus with a removal solvent that boils at a temperature ranging from 120° C. to 250° C. and has a viscosity of 2.5 centipoise or less.
2 . The method of claim 1 wherein the removal solvent has a surface tension of 22 dyne/cm or greater.
3 . The method of claim 1 wherein the removal solvent has a total solubility parameter of 17 (J/cm 3 ) 1/2 or greater.
4 . The method of claim 1 wherein removal solvent boils at a temperature ranging from 150° C. to 250° C.
5 . The method of claim 1 wherein the removal solvent comprises a compound having the following formula: R 14 COR 15 CO 2 R 16 where R 14 and R 15 are each independently a hydrocarbon group having from 1 to 6 carbon atoms and R 16 is a hydrocarbon group having from 1 to 4 carbon atoms.
6 . The method of claim 5 wherein the compound is at least one selected from ethylacetoacetate, methyl acetoacetate, allyl acetoacetate, t-butyl acetoacetate, ethyl-3-ethoxypropionate, and 2-butoxyethyl acetate.
7 . The method of claim 6 wherein the compound is ethylacetoacetate.
8 . The method of 1 wherein the removal solvent comprises a compound having the following formula: R 17 3 CCO 2 —R 18 where R 17 is independently a H atom, an alkoxy group having from 1 to 4 carbon atoms, or a hydrocarbon group having from 1 to 4 carbon atoms and R 18 is a hydrocarbon having from 1 to 8 carbon atoms, an alkyl ether group —(CH 2 ) n —O—R 19 wherein R 19 is an alkyl group having from 1 to 4 carbon atoms, n is a number ranging from 1 to 4, or an alkylene glycol alkyl ether where the alkylene glycol has from 2 to 4 carbon atoms and the alkyl group has from 1 to 5 carbon atoms.
9 . The method of claim 8 wherein the compound is at least one selected from di-n-propyl carbonate and hexyl acetate.
10 . The method of claim 1 wherein the compound is at least one selected from acetophone, benzylamine, furfural, diglyme, and tetramethyl urea.
11 . A method for removing residues comprising silicon from at least a portion of coated substrate and/or deposition apparatus, the method comprising:
treating the coated substrate and/or deposition apparatus with a removal solvent comprising a compound selected from the group consisting of:
a compound having the following formula: R 14 COR 15 CO 2 R 16 where R 14 and R 15 are each independently a hydrocarbon group having from 1 to 6 carbon atoms and R 16 is a hydrocarbon group having from 1 to 4 carbon atoms;
a compound having the following formula: R 17 3 CCO 2 —R 18 where R 17 is independently a H atom, an alkoxy group having from 1 to 4 carbon atoms, or a hydrocarbon group having from 1 to 4 carbon atoms and R 18 is a hydrocarbon having from 1 to 8 carbon atoms, an alkyl ether group —(CH 2 ) n —O—R 19 wherein R 19 is an alkyl group having from 1 to 4 carbon atoms, n is a number ranging from 1 to 4, or an alkylene glycol alkyl ether where the alkylene glycol has from 2 to 4 carbon atoms and the alkyl group has from 1 to 5 carbon atoms; and
mixtures thereof.
12 . The method of claim 11 wherein the removal solvent boils at a temperature ranging from 120 to 250° C.
13 . The method of claim 11 wherein the removal solvent boils at a temperature ranging from 150 to 250° C.
14 . The method of claim 11 wherein the removal solvent has a surface tension of 22 dyne/cm or greater.
15 . The method of claim 11 wherein the removal solvent has a viscosity of 2.5 centipoise of less.
16 . The method of claim 11 wherein the removal solvent further has a total solubility parameter of 17 (J/cm 3 ) 1/2 or greater.
17 . A method for removing residues comprising silicon from at least a portion of a coated substrate comprising:
preparing a film-forming composition comprising at least one silica source and at least one solvent;
depositing the film-forming composition onto a substrate to provide a coated substrate comprising a silicon-containing film and residues comprising silicon using a deposition apparatus;
drying the coated substrate;
treating the coated substrate with a removal solvent to remove at least a portion of the residues;
removing the removal solvent and residues from the coated substrate to provide a treated substrate;
drying the treated substrate; and
curing the treated substrate.
18 . The method of claim 17 further comprising contacting the deposition apparatus with the removal solvent to remove residues contained thereupon.
19 . The method of claim 17 wherein the removal solvent boils at a temperature ranging from 120 to 250° C.
20 . The method of claim 19 wherein the removal solvent boils at a temperature ranging from 150 to 250° C.
21 . The method of claim 19 wherein the removal solvent has a viscosity of 2.5 centipoise or less.
22 . The method of claim 19 wherein the removal solvent has a surface tension of 22 dyne/cm or greater.
23 . The method of claim 19 wherein the removal solvent has a total solubility parameter of 17 (J/cm 3 ) 1/2 or greater.
24 . The method of claim 19 wherein the removal solvent comprises a compound having the general structure: R 14 COR 15 CO 2 R 16 where R 14 and R 15 are each independently a hydrocarbon group having from 1 to 6 carbon atoms and R 16 is a hydrocarbon group having from 1 to 4 carbon atoms.
25 . The method of claim 24 wherein the removal solvent comprises a compound selected from the group consisting of ethylacetoacetate, methyl acetoacetate, allyl acetoacetate, t-butyl acetoacetate, ethyl-3-ethoxypropionate, and 2-butoxyethyl acetate, and mixtures thereof.
26 . The method of claim 25 wherein the removal solvent comprises ethylacetoacetate.
27 . The method of claim 19 wherein the removal solvent comprises a compound having the general structure R 7 3 CCO 2 —R 18 where R 17 is independently a H atom, an alkoxy group having from 1 to 4 carbon atoms, or a hydrocarbon group having from 1 to 4 carbon atoms and R 18 is a hydrocarbon having from 1 to 8 carbon atoms, an alkyl ether group —(CH 2 ) n —O—R 19 wherein R 19 is an alkyl group having from 1 to 4 carbon atoms, n is a number ranging from 1 to 4, or an alkylene glycol alkyl ether where the alkylene glycol has from 2 to 4 carbon atoms and the alkyl group has from 1 to 5 carbon atoms.
28 . The method of claim 27 wherein the removal solvent comprises a compound selected from the group consisting of di-n-propyl carbonate, hexyl acetate, and mixtures thereof.
29 . The method of claim 17 where the treating step comprises ejecting the removal solvent from a nozzle and rotating the coated substrate during at least a portion of ejecting.
30 . The method of claim 29 wherein an inner diameter of the nozzle is 0.7 mm or less.
31 . The method of claim 29 wherein the nozzle is oriented 90° to the substrate.
32 . The method of claim 29 wherein the nozzle is oriented 60° to the substrate surface.
33 . The method of claim 29 wherein the removal solvent is ejected from the nozzle using gas pressure.
34 . The method of claim 29 wherein the removal solvent is ejected from the nozzle by mechanical means.
35 . The method of claim 29 wherein the coated substrate is rotated at a speed ranging from 500 to 3000 rpm.
36 . The method of claim 17 wherein the duration of the treating step ranges from 1 to 180 seconds.
37 . The method of claim 17 wherein treating and drying steps are conducted prior to the curing step.
38 . The method of claim 17 wherein the at least one solvent in the film-forming composition and the removal solvent are the same.
39 . The method of claim 17 wherein the at least one solvent in the film-forming composition and the removal solvent are different.
40 . The method of claim 17 wherein the removal solvent has a metal purity level of about 500 ppm or less.