Composition for forming insulating film and process for producing insulating film
View Patent ↗A composition for forming an insulating film comprising at least one of a compound represented by formula (I), a hydrolysate of the compound represented by formula (I) and a condensate of the compound represented by formula (I): wherein R 1 to R 7 each independently represents an organic group, and R 1 to R 7 are the same or different. And an insulating film obtained by a process, the process comprising using the compound represented by formula (I) as a starting material.
1. An insulating film obtained by a process, the process comprising
using a compound represented by formula (I) as a starting material:
wherein R 1 to R 7 each independently represents an organic group, and R 1 to R 7 are the same or different, wherein the using comprises:
applying a composition comprising the compound represented by formula (I) to a substrate to produce an applied composition; and
heating the applied composition at a temperature of from 300° C. to 450° C., so as to form the insulating film.
2. The insulating film according to claim 1 ,
wherein the composition further comprises a basic catalyst.
3. The insulating film according to claim 1 ,
wherein at least one of R 1 to R 7 represents a phenyl group.
4. The insulating film according to claim 1 ,
wherein the composition further comprises at least one of a compound represented by formula (II), a hydrolysate of the compound represented by formula (II), and a condensate of the compound represented by formula (II):
R 8 Si(OR 9 ) 3 Formula (II)
wherein R 8 represents a hydrogen atom, a fluorine atom or an organic group; and
R 9 represents an organic group.
5. The insulating film according to claim 4 ,
wherein R 8 represents a methyl group.
6. The insulating film according to claim 4 ,
wherein an amount of the compound represented by formula (II) is from 0.1 to 50 mol per mol of the compound represented by formula (I).
7. The insulating film according to claim 1 , which has a value of σ/average film thickness of 0.01 or less.
8. A process for producing an insulating film comprising:
providing a composition for forming an insulating film comprising at least one of a compound represented by formula (I) and a condensate of the compound represented by formula (I):
wherein R 1 to R 7 each independently represents an organic group, and R 1 to R 7 are the same or different;
applying the composition for forming an insulating film to a substrate to produce an applied composition; and
heating the applied composition at a temperature of from 300° C. to 450° C., so as to form the insulating film.
9. The process for producing an insulating film according to claim 8 , wherein the composition for forming an insulating film further comprises a basic catalyst.
10. The process for producing an insulating film according to claim 8 ,
wherein at least one of R 1 to R 7 represents a phenyl group.
11. The process for producing an insulating film according to claim 8 , further comprising providing at least one of a compound represented by formula (II), a hydrolysate of the compound represented by formula (II), and a condensate of the compound represented by formula (II):
R 8 Si(OR 9 ) 3 Formula (II)
wherein R 8 represents a hydrogen atom, a fluorine atom or an organic group; and
R 9 represents an organic group.
12. The process for producing an insulating film according to claim 11 ,
wherein R 8 represents a methyl group.
13. The process for producing an insulating film according to claim 11 ,
wherein an amount provided of the compound represented by formula (II) is from 0.1 to 50 mol per mol of the compound represented by formula (I).