IP Library Granted Patent US 7,006,399
Granted Patent B2
US 7,006,399 · App. 11/062,826 · Granted Feb 28, 2006

Semiconductor device comprising a differential sense amplifier, a write column selection switch and a read column selection switch

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Quick Facts
Patent No.
US 7,006,399
App. No.
11/062,826
Granted
Feb 28, 2006
Kind
B2
Abstract

A semiconductor device includes a differential sense amplifier connected to a bit line, and a data transfer circuit including a column selection switch for turning ON/OFF the connection between a data line and the bit line. The semiconductor device incorporates one of the following features: the on-state resistance of the column selection switch being higher than that of a transistor array of the differential sense amplifier; separate provision of two column selection switches, one for read operation and the other for write operation; provision of a bit line additional capacitance and a connection control switch therefor; and provision of a data line dividing switch.

Claims (9)

1. A semiconductor device, comprising:

a differential sense amplifier connected to a bit line; and

a data transfer circuit including a column selection switch for turning ON/OFF connection between a data line and the bit line, wherein:

the differential sense amplifier includes a power supply and a transistor array of at least one MOS transistor connecting the power supply with the bit line; and

an on-state resistance of the column selection switch is higher than that of the transistor array.

2. The semiconductor device of claim 1 , wherein:

the bit line includes a first bit line and a second bit line that go high and low, respectively, when the differential sense amplifier is activated in a read operation;

the differential sense amplifier includes a P-channel MOS transistor connecting the power supply with the second bit line; and

a potential of the first bit line is higher than a threshold of the P-channel MOS transistor.