Method for producing masks for photolithography and the use of such masks
View Patent ↗A mask for photolithography methods comprises opaque and transparent areas as well as a surface structure. For the contact with a substrate ( 10 ) to be exposed at least a few opaque areas are incorporated and at least a few transparent areas are arranged in a spaced fashion and are deep-etched down to a structural depth. In a further embodiment at least one transparent area is designed as a positively resting area ( 12 ). The structural depth in the deep-etched areas is greater than the thickness of the surface structure, at least greater than or equal to 1 μm.
1. Mask for photolithography method comprising opaque and transparent areas and a surface structure, characterized in that for the purpose of establishing a contact to a substrate ( 10 ) that is supposed to be exposed, at least a few opaque areas are designed as areas resting positively on said substrate and at least a few transparent areas within a portion of the mask facing entirely to said substrate are arranged spaced and deep-etched down to a structural depth, and at least one transparent area is designed as a positively resting area for resting on said substrate, wherein the structural depth in the deep-etched areas is greater than the thickness of the surface structure.
2. Mask pursuant to claim 1 , characterized in that the positively resting areas are essentially identical to those areas that are provided for the exposure of high resolution structures.
3. Mask pursuant to claim 1 , characterized in that the structural depth in the deep-etched areas is at least greater than or equal to 1 μm.
4. Mask pursuant to claim 1 , characterized in that the ratio of the width of the contact areas to the structural depth in any case is better than 1:2.
5. Mask pursuant to claim 1 , characterized in that the surface ratio of contact areas to spaced areas is at least 1:100.
6. Mask pursuant to claim 1 , consisting of glass with structuring made of chrome.
7. Method for producing a mask pursuant to claim 1 comprising the following steps:
Treatment of the mask to be structured with a bonding agent;
Application of photoresist on the mask;
Masking of the areas that are not supposed to be deep-etched;
Exposure of the photoresist;
Development of the exposed photoresists;
Etching of the areas not covered by the photoresist;
Cleaning of the photomask.
8. A lithography method comprising a mask pursuant to claim 1 with the following steps:
Provision of a substrate ( 10 ) that is to be structured with a photo-sensitive layer;
Application of a mask on the substrate such that opaque contact areas and transparent spaced areas are implemented;
Exposure of the substrate through the mask;
Development of the photosensitive layer.
9. The mask pursuant to claim 1 , characterized in that the structural depth in the deep-etched areas is 5 μm.
10. The mask pursuant to claim 1 , characterized in that the ratio of the width of the contact area to the structural depth in any case is 1:1 or above.
11. The mask pursuant to claim 1 , characterized in that the surface ratio of contact areas to spaced areas is 1:10 or above.
12. The mask pursuant to claim 6 , wherein the glass is quartz glass.