IP Library Granted Patent US 7,233,065
Granted Patent B2
US 7,233,065 · App. 11/064,822 · Granted Jun 19, 2007

Semiconductor device having capacitors for reducing power source noise

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Quick Facts
Patent No.
US 7,233,065
App. No.
11/064,822
Granted
Jun 19, 2007
Kind
B2
Abstract

A semiconductor device comprises a BGA substrate having one principal plane furnished with a large number of solder balls, the solder balls constituting a ball grid array; a semiconductor chip mounted on another principal plane of the BGA substrate, the semiconductor chip being electrically connected to the BGA substrate by metal wires; and chip capacitors mounted on the semiconductor chip to reduce power source noise.

Claims (8)

1. A semiconductor device comprising:

a BGA substrate having one principal plane furnished with a large number of solder balls, said solder balls constituting a ball grid array;

a semiconductor chip mounted on another principal plane of said BGA substrate, said semiconductor chip being electrically connected to said BGA substrate by metal wires;

chip capacitors mounted on said semiconductor chip to reduce power source noise;

a conductive radiator attached to said another principal plane of said BGA substrate, said conductive radiator covering said semiconductor chip; and

a shield plane incorporated in said BGA substrate, said shield plane constituting a shield of said semiconductor chip in combination with said conductive radiator;

wherein said conductive radiator and said shield plane are connected to ground potential.

2. The semiconductor device according to claim 1 , further comprising a radiating fin attached to an external surface of said conductive radiator.

Assignments (1)
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →